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HMC604LP3E PDF预览

HMC604LP3E

更新时间: 2024-01-14 14:06:34
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器
页数 文件大小 规格书
10页 355K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz

HMC604LP3E 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete针数:16
Reach Compliance Code:not_compliantHTS代码:8542.31.00.01
风险等级:5.69安装特点:SURFACE MOUNT
功能数量:1端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC16,.12SQ,20
电源:3/5 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:55 mA
表面贴装:YES技术:GAAS
Base Number Matches:1

HMC604LP3E 数据手册

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HMC604LP3 / 604LP3E  
v00.0308  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz  
5
Typical Applications  
The HMC604LP3 / HMC604LP3E is ideal for:  
Features  
Noise Figure: 1.5 dB  
• WiMAX/C-band Radio  
Output IP3: +26 dBm  
• Fixed Wireless  
Gain: 15 dB  
• Tower Mounted Amplifiers  
• Public Safety Infrastructure  
• Telematics & DSRC  
Integrated Low Loss LNA Bypass Path  
Single Supply: +3V or +5V  
50 Ohm Matched Output/Input  
16 Lead 3x3mm QFN Package: 9 mm2  
Functional Diagram  
General Description  
The HMC604LP3(E) is a versatile, high dynamic  
range GaAs MMIC Low Noise Amplifier that integrates  
a low loss LNA bypass mode on the IC. The amplifier  
is ideal for WiMAX & C-band Radio receivers  
operating between 4.8 and 6.0 GHz and provides  
1.5 dB noise figure, 15 dB of gain and +26 dBm IP3  
from a single supply of +5V @ 42mA. Input and output  
return losses are 12 and 14 dB respectively with no  
external matching components required. A single  
control line (0/Vdd) is used to switch between LNA  
mode and a low loss bypass mode which reduces the  
current consumption to 10 μA.  
Electrical Specifications, TA = +25° C  
Vdd = +3V  
Vdd = +5V  
Bypass Mode  
Parameter  
LNA Mode  
Typ.  
Bypass Mode  
LNA Mode  
Typ.  
Units  
Min.  
10  
Max. Min.  
4.8 - 6.0  
-3  
Typ.  
Max. Min.  
13  
Max. Min.  
4.8 - 6.0  
-3  
Typ.  
Max.  
Frequency Range  
GHz  
dB  
Gain  
12.5  
0.026  
1.6  
-2  
0.002  
2
15  
0.026  
1.5  
12  
-2  
0.002  
2
Gain Variation Over Temperature  
Noise Figure  
dB / °C  
dB  
2.1  
2
Input Return Loss  
14  
20  
20  
-
20  
20  
-
dB  
Output Return Loss  
Reverse Isolation  
15  
14  
dB  
28  
30  
dB  
Power for 1dB Compression (P1dB)*  
Saturated Output Power (Psat)  
10  
24  
25  
14  
24  
25  
dBm  
dBm  
10.5  
14.5  
Third Order Intercept (IP3)*  
(-20 dBm Input Power per tone,  
1 MHz tone spacing)  
21  
23  
26  
23  
dBm  
Supply Current (Idd)  
17  
7
25  
0.01  
42  
6
55  
0.01  
mA  
ns  
LNA Mode to Bypass Mode  
Switching  
Speed  
Bypass Mode to LNA Mode  
50  
150  
ns  
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 204  

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