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HMC593LP3E PDF预览

HMC593LP3E

更新时间: 2024-11-27 04:02:35
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器
页数 文件大小 规格书
8页 335K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz

HMC593LP3E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:TransferredReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.08
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:16 dB
最大输入功率 (CW):15 dBmJESD-609代码:e3
最大工作频率:3800 MHz最小工作频率:3300 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:NARROW BAND LOW POWER端子面层:Matte Tin (Sn)
Base Number Matches:1

HMC593LP3E 数据手册

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HMC593LP3 / 593LP3E  
v00.0407  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz  
5
Typical Applications  
The HMC593LP3 / HMC593LP3E is ideal for:  
Features  
Noise Figure: 1.2 dB  
Output IP3: +29 dBm  
Gain: 19 dB  
• Wireless Infrastructure  
• Fixed Wireless  
• WiMAX WiBro / 4G  
Low Loss LNA Bypass Path  
Single Supply: +5.0V @ 40mA  
50 Ohm Matched Output  
• Tower Mounted Amplifiers  
Functional Diagram  
General Description  
The HMC593LP3 / HMC593LP3E are versatile, high  
dynamic range GaAs MMIC Low Noise Amplifiers  
that integrate a low loss LNA bypass mode on the IC.  
The amplifier is ideal for WiBro & WiMAX receivers  
operating between 3.3 and 3.8 GHz and provides 1.2  
dB noise figure, 19 dB of gain and +29 dBm IP3 from  
a single supply of +5.0V @ 40mA. Input and output  
return losses are 23 and 13 dB respectively with no  
external matching components required. A single  
control line (0/+3V) is used to switch between LNA  
mode and a low 2.0 dB loss bypass mode reducing  
the current consumption to 10 μA.  
Electrical Specifications, TA = +25° C, Vdd = +5V  
LNA Mode  
Bypass Mode  
Typ. Max.  
Parameter  
Units  
Min.  
16  
Typ.  
3.3 - 3.8  
19  
Max.  
1.6  
Min.  
-3.0  
Frequency Range  
Gain  
3.3 - 3.8  
-2.0  
GHz  
dB  
Gain Variation Over Temperature  
Noise Figure  
0.011  
1.2  
0.002  
dB / °C  
dB  
Input Return Loss  
23  
30  
25  
dB  
Output Return Loss  
13  
dB  
Reverse Isolation  
19  
dB  
Power for 1dB Compression (P1dB)*  
Saturated Output Power (Psat)  
13  
16  
30  
dBm  
dBm  
17  
Third Order Intercept (IP3)*  
(-20 dBm Input Power per tone, 1 MHz tone spacing)  
29  
dBm  
Supply Current (Idd)  
40  
-
50  
0.01  
<4  
-
mA  
ns  
LNA Mode to Bypass Mode  
Bypass Mode to LNA Mode  
Swtiching Speed  
250  
μs  
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 176  

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