Datasheet > 射频和微波 > 射频/微波放大器> HMC591LP5TR

HMC591LP5TR

更新时间： 2024-11-27 13:08:23

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器功率放大器高功率电源
页数	文件大小	规格书
8页	268K
描述
Wide Band High Power Amplifier, 1 Func, GAAS,

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技术参数
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HMC591LP5TR 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	LCC32,.2SQ,20	Reach Compliance Code：	unknown
风险等级：	5.72	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	32
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	LCC32,.2SQ,20
电源：	7 V	射频/微波设备类型：	WIDE BAND HIGH POWER
子类别：	RF/Microwave Amplifiers	表面贴装：	YES
技术：	GAAS	Base Number Matches：	1

HMC591LP5TR 数据手册

HMC591LP5 / 591LP5E

v02.0107

GaAs PHEMT MMIC 2 WATT

POWER AMPLIFIER, 6.0 - 9.5 GHz

Typical Applications

Features

The HMC591LP5 / HMC591LP5E is ideal for use as a

power ampliﬁer for:

Saturated Output Power: +33 dBm @ 20% PAE

Output IP3: +41 dBm

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Test Equipment & Sensors

• Military End-Use

Gain: 18 dB

DC Supply: +7.V @ 1340 mA

50 Ohm Matched Input/Output

QFN Leadless SMT Packages, 25 mm²

• Space

Functional Diagram

General Description

The HMC591LP5 & HMC591LP5E are high dynamic

range GaAs PHEMT MMIC 2 Watt Power Ampliﬁers

which operate from 6 to 9.5 GHz. The ampliﬁer

provides 18 dB of gain, +33 dBm of saturated power,

and 19% PAE from a +7V supply. This 50 Ohm mat-

ched ampliﬁer does not require any external

components and the RF I/Os are DC blocked for

robust operation. For applications which require

optimum OIP3, Idd should be set for 940 mA, to

yield +41 dBm OIP3. For applications which require

optimum output P1dB, Idd should be set for 1340 mA,

to yield +33 dBm Output P1dB.

Electrical Speciﬁcations, T_A= +25° C, Vdd = +7V, Idd = 1340 mA^[1]

Parameter

Min.

Typ.

6 - 8

Max.

Min.

Typ.

6 - 9.5

Max.

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

0.05

dB/ °C

Output Return Loss

Output Power for 1 dB

Compression (P1dB)

dBm

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)^[2]

Supply Current (Idd)

32.5

dBm

1340

[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.

[2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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与HMC591LP5TR相关器件

型号	品牌	获取价格	描述	数据表
HMC592	HITTITE	获取价格	GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz
HMC592_09	HITTITE	获取价格	GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10 - 13 GHz
HMC593LP3	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
HMC593LP3_09	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
HMC593LP3E	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
HMC593LP3ERTR	ADI	获取价格	Amplifier
HMC593LP3ETR	HITTITE	获取价格	Narrow Band Low Power Amplifier,
HMC593LP3RTR	ADI	获取价格	HMC593LP3RTR
HMC593LP3TR	HITTITE	获取价格	Narrow Band Low Power Amplifier,
HMC594	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz

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