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HMC590LP5ETR PDF预览

HMC590LP5ETR

更新时间: 2024-01-29 09:05:36
品牌 Logo 应用领域
HITTITE 射频微波
页数 文件大小 规格书
8页 882K
描述
Wide Band Medium Power Amplifier,

HMC590LP5ETR 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.63射频/微波设备类型:WIDE BAND MEDIUM POWER
Base Number Matches:1

HMC590LP5ETR 数据手册

 浏览型号HMC590LP5ETR的Datasheet PDF文件第2页浏览型号HMC590LP5ETR的Datasheet PDF文件第3页浏览型号HMC590LP5ETR的Datasheet PDF文件第4页浏览型号HMC590LP5ETR的Datasheet PDF文件第5页浏览型号HMC590LP5ETR的Datasheet PDF文件第6页浏览型号HMC590LP5ETR的Datasheet PDF文件第7页 
HMC590LP5 / 590LP5E  
v02.0113  
GaAs pHEMT MMIC 1 WATT  
POWER AMPLIFIER, 6.0 - 9.5 GHz  
Typical Applications  
Features  
The HMC590LP5 / HMC590LP5E is ideal for use as a  
power amplifier for:  
Saturated Output Power: +31.5 dBm @ 23% PAE  
Output IP3: +40 dBm  
• Point-to-Point Radios  
• Point-to-Multi-Point Radios  
• Test Equipment & Sensors  
• Military End-Use  
Gain: 21 dB  
DC Supply: +7V @ 820 mA  
50 Ohm Matched Input/Output  
QFN Leadless SMT Packages, 25 mm2  
• Space  
Functional Diagram  
General Description  
The HMC590LP5 & HMC590LP5E are high dynamic  
range GaAs pHEMT MMIC 1 Watt Power Amplifiers  
which operate from 6 to 9.5 GHz. The amplifier pro-  
vides 21 dB of gain, +31 dBm of saturated power,  
and 23% PAE from a +7V supply. This 50 Ohm  
matched amplifier does not require any external  
components and the RF I/Os are DC blocked for ro-  
bust operation. For applications which require op-  
timum OIP3, Idd should be set for 520 mA, to yield  
+40 dBm OIP3. For applications which require  
optimum output P1dB, Idd should be set for 820 mA,  
to yield +30 dBm Output P1dB.  
Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 820 mA[1]  
Parameter  
Min.  
Typ.  
6 - 8  
21  
Max.  
Min.  
Typ.  
6 - 9.5  
21  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
18  
18  
Gain Variation Over Temperature  
Input Return Loss  
0.05  
15  
0.05  
12  
dB/ °C  
dB  
Output Return Loss  
11  
10  
dB  
Output Power for 1 dB  
Compression (P1dB)  
27  
30  
27.5  
30.5  
dBm  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)[2]  
Supply Current (Idd)  
30.5  
40  
31  
40  
dBm  
dBm  
mA  
820  
820  
[1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical.  
[2] Measurement taken at 7V @ 520mA, Pin/Tone = -15 dBm  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
1

HMC590LP5ETR 替代型号

型号 品牌 替代类型 描述 数据表
HMC590LP5E HITTITE

类似代替

GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz

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