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HMC575LP4E PDF预览

HMC575LP4E

更新时间: 2024-11-23 03:44:07
品牌 Logo 应用领域
HITTITE 输出元件倍频器
页数 文件大小 规格书
6页 254K
描述
SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 6 - 9 GHz OUTPUT

HMC575LP4E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:LCC24,.16SQ,20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.09
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):13 dBmJESD-609代码:e3
安装特点:SURFACE MOUNT端子数量:24
最大工作频率:4500 MHz最小工作频率:3000 MHz
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC24,.16SQ,20
电源:5 V射频/微波设备类型:FREQUENCY DOUBLER
子类别:RF/Microwave Frequency Multipliers表面贴装:YES
技术:GAAS端子面层:Matte Tin (Sn)
Base Number Matches:1

HMC575LP4E 数据手册

 浏览型号HMC575LP4E的Datasheet PDF文件第2页浏览型号HMC575LP4E的Datasheet PDF文件第3页浏览型号HMC575LP4E的Datasheet PDF文件第4页浏览型号HMC575LP4E的Datasheet PDF文件第5页浏览型号HMC575LP4E的Datasheet PDF文件第6页 
HMC575LP4 / 575LP4E  
v00.0506  
SMT GaAs MMIC x2 ACTIVE FREQUENCY  
MULTIPLIER, 6 - 9 GHz OUTPUT  
Typical Applications  
Features  
The HMC575LP4 / HMC575LP4E is suitable for:  
High Output Power: +17 dBm  
Low Input Power Drive: -2 to +6 dBm  
Fo, 3Fo Isolation: 15 dBc  
• Wireless Local Loop  
• Point-to-Point & VSAT Radios  
• Test Instrumentation  
7
100 KHz SSB Phase Noise: -140 dBc/Hz  
Single Supply: +5V@ 90 mA  
RoHS Compliant 4x4 mm SMT Package  
• Military & Space  
Functional Diagram  
General Description  
The HMC575LP4 & HMC575LP4E are x2 active  
broadband frequency multipliers utilizing GaAs  
PHEMT technology in a leadless RoHS compliant  
SMT package. When driven by a 3 dBm signal, the  
multiplier provides +17 dBm typical output power from  
6 to 9 GHz. The Fo and 3Fo isolations are 15 dBc with  
respect to output signal level. This frequency multiplier  
features DC blocked I/O’s, and is ideal for use in LO  
multiplier chains for Pt to Pt & VSAT Radios yielding  
reducedpartscountvs.traditionalapproaches.Thelow  
additive SSB Phase Noise of -140 dBc/Hz at 100 kHz  
offset helps maintain good system noise performance.  
The HMC575LP4 & HMC575LP4E are compatible with  
surface mount manufacturing techniques.  
Electrical Specifications, TA = +25° C, Vdd1, Vdd2 = +5V, 3 dBm Drive Level  
Parameter  
Min.  
Typ.  
3 - 4.5  
6 - 9  
17  
Max.  
Units  
GHz  
GHz  
dBm  
dBc  
Frequency Range, Input  
Frequency Range, Output  
Output Power  
14  
Fo Isolation (with respect to output level)  
3Fo Isolation (with respect to output level)  
Input Return Loss  
15  
15  
dBc  
15  
dB  
Output Return Loss  
12  
dB  
SSB Phase Noise (100 kHz Offset)  
Supply Current (Idd1 & Idd2)  
-140  
90  
dBc/Hz  
mA  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
7 - 82  

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