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HMC574MS8ETR PDF预览

HMC574MS8ETR

更新时间: 2024-11-23 20:03:51
品牌 Logo 应用领域
HITTITE 射频微波光电二极管
页数 文件大小 规格书
8页 255K
描述
SPDT, 0MHz Min, 3000MHz Max, 1 Func, 0.8dB Insertion Loss-Max, GAAS, ROHS COMPLIANT, PLASTIC, SMT, MSOP-8

HMC574MS8ETR 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TSSOP8,.19Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.69
1dB压缩点:36 dBm特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):39 dBm
最大插入损耗:0.8 dB最小隔离度:16 dB
JESD-609代码:e3安装特点:SURFACE MOUNT
功能数量:1端子数量:8
准时:0.12 µs最大工作频率:3000 MHz
最小工作频率:最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:TSSOP8,.19端口终止:REFLECTIVE
电源:5 V射频/微波设备类型:SPDT
子类别:RF/Microwave Switches表面贴装:YES
技术:GAAS端子面层:Matte Tin (Sn)
Base Number Matches:1

HMC574MS8ETR 数据手册

 浏览型号HMC574MS8ETR的Datasheet PDF文件第2页浏览型号HMC574MS8ETR的Datasheet PDF文件第3页浏览型号HMC574MS8ETR的Datasheet PDF文件第4页浏览型号HMC574MS8ETR的Datasheet PDF文件第5页浏览型号HMC574MS8ETR的Datasheet PDF文件第6页浏览型号HMC574MS8ETR的Datasheet PDF文件第7页 
HMC574MS8 / 574MS8E  
v02.0308  
GaAs MMIC 5 WATT T/R SWITCH  
DC - 3 GHz  
Typical Applications  
Features  
The HMC574MS8 / HMC574MS8E is ideal for:  
• Cellular/3G Infrastructure  
• Private Mobile Radio Handsets  
• WLAN, WiMAX & WiBro  
Low Insertion Loss: 0.3 dB  
High Third Order Intercept: +65 dBm  
Isolation: 30 dB  
Single Positive Supply: +3 to +8V  
SMT Package: MSOP8  
• Automotive Telematics  
• Test Equipment  
Included in the HMC-DK005 Designer’s Kit  
Functional Diagram  
General Description  
The HMC574MS8 & HMC574MS8E are low-cost  
SPDT switches in 8-lead MSOP packages for use  
in transmit/receive applications which require very  
low distortion at high incident power levels. The  
device can control signals from DC to 3 GHz and  
is especially suited for Cellular/3G infrastructure,  
WiMAX and WiBro applications with only 0.3 dB  
typical insertion loss. The design provides 5 watt  
power handling performance and +65 dBm third  
order intercept at +8 Volt bias. RF1 and RF2 are  
reflective shorts when “Off”.  
10  
Electrical Specifications,  
TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc (Unless Otherwise Stated), 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
0.25  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
dB  
dB  
dB  
dB  
Insertion Loss  
Isolation  
0.5  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
26  
24  
21  
16  
30  
28  
25  
20  
dB  
dB  
dB  
dB  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
35  
25  
18  
16  
dB  
dB  
dB  
dB  
Return Loss  
Vctl = 0/+3V  
Vctl = 0/+5V  
Vctl = 0/+8V  
33  
35  
37  
36  
38  
39  
dBm  
dBm  
dBm  
Input Power for 1dB Compression  
Input Third Order Intercept  
0.5 - 3.0 GHz  
Vctl = 0/+3V  
Vctl = 0/+5V  
Vctl = 0/+8V  
55  
63  
65  
dBm  
dBm  
dBm  
0.5 - 3.0 GHz  
DC - 3.0 GHz  
(Two-tone Input Power = +27 dBm Each Tone)  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
80  
120  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 350  

HMC574MS8ETR 替代型号

型号 品牌 替代类型 描述 数据表
HMC574MS8E HITTITE

类似代替

GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz

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