Datasheet > 射频和微波 > 射频/微波倍频器> HMC573LC3BTR

HMC573LC3BTR

更新时间： 2024-11-23 13:08:23

品牌	Logo	应用领域
HITTITE		射频和微波射频倍频器微波倍频器输出元件 PC
页数	文件大小	规格书
6页	259K
描述
Frequency Doubler

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中文翻译

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技术参数
数据手册
替代型号

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HMC573LC3BTR 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.31	射频/微波设备类型：	FREQUENCY DOUBLER
Base Number Matches：	1

HMC573LC3BTR 数据手册

HMC573LC3B

v00.0906

SMT GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 8 - 22 GHz OUTPUT

Typical Applications

Features

The HMC573LC3B is suitable for:

High Output Power: +12 dBm

• Clock Generation Applications:

SONET OC-192 & SDH STM-64

Low Input Power Drive: 0 to +6 dBm

Fo Isolation: >20 dBc @ Fout= 16 GHz

100 KHz SSB Phase Noise: -134 dBc/Hz

Single Supply: +5V@ 92 mA

• Point-to-Point & VSAT Radios

• Test Instrumentation

• Military & Space

RoHS Compliant 3x3 mm SMT Package

Functional Diagram

General Description

The HMC573LC3B is a x2 active broadband frequ-

ency multiplier utilizing GaAs PHEMT technology in a

leadless RoHS compliant SMT package. When driven

by a +5 dBm signal, the multiplier provides +12 dBm

typical output power from 8 to 22 GHz. The Fo and

3Fo isolations are >20 dBc and >25 dBc respectively

at 16 GHz. The HMC573LC3B is ideal for use in LO

multiplier chains for Pt to Pt & VSAT Radios yielding

reduced parts count vs. traditional approaches. The

low additive SSB Phase Noise of -134 dBc/Hz at

100 kHz offset helps maintain good system noise

performance. The RoHS packaged HMC573LC3B

eliminates the need for wire bonding, and allows the

use of surface mount manufacturing techniques.

Electrical Specifications, T_A= +25°C, Vdd = +5V, 5 dBm Drive Level

Parameter

Min.

Typ.

4 - 11

8 - 22

Max.

Units

GHz

dBm

dBc

Frequency Range, Input

Frequency Range, Output

Output Power

Fo Isolation (with respect to output level)

3Fo Isolation (with respect to output level)

4Fo Isolation (with respect to output level)

Input Return Loss

dBc

Output Return Loss

SSB Phase Noise (100 kHz Offset)

-134

dBc/Hz

Supply Current (Idd) (Vdd = 5V, Vgg = -1.25V Typ.)

*Adjust Vgg between -1.5 and ~1.1V to achieve Idd = 92 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

7 - 88

12 3 4 5 6

中文翻译

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HMC573LC3BTR 替代型号

型号	品牌	替代类型	描述	数据表
HMC573LC3B	HITTITE	类似代替	SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 22 GHz OUTPUT

与HMC573LC3BTR相关器件

型号	品牌	获取价格	描述	数据表
HMC573LC3BTR-R5	ADI	获取价格	IC MMIC MULTIPLIER X2 12SMD
HMC574A	ADI	获取价格	GaAs MMIC 5 W T/R开关DC至3 GHz
HMC574AMS8	ADI	获取价格	RF/MICROWAVE DIVERSITY SWITCH
HMC574AMS8E	ADI	获取价格	GaAs MMIC 5 Watt T/R Switch DC - 3 GHz
HMC574MS8	HITTITE	获取价格	GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz
HMC574MS8_09	HITTITE	获取价格	GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz
HMC574MS8E	ADI	获取价格	5 Watt SPDT T/R Switch SMT, DC - 3 GHz
HMC574MS8E	HITTITE	获取价格	GaAs MMIC 5 WATT T/R SWITCH DC - 3 GHz
HMC574MS8ETR	HITTITE	获取价格	SPDT, 0MHz Min, 3000MHz Max, 1 Func, 0.8dB Insertion Loss-Max, GAAS, ROHS COMPLIANT, PLAST
HMC574MS8ETR	ADI	获取价格	5 Watt SPDT T/R Switch SMT, DC - 3 GHz

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