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HMC573LC3B PDF预览

HMC573LC3B

更新时间: 2024-11-23 04:20:51
品牌 Logo 应用领域
HITTITE 射频和微波射频倍频器微波倍频器输出元件PC
页数 文件大小 规格书
6页 259K
描述
SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 22 GHz OUTPUT

HMC573LC3B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:TransferredReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENTJESD-609代码:e4
最大工作频率:22000 MHz最小工作频率:8000 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:FREQUENCY DOUBLER端子面层:Gold (Au) - with Nickel (Ni) barrier
Base Number Matches:1

HMC573LC3B 数据手册

 浏览型号HMC573LC3B的Datasheet PDF文件第2页浏览型号HMC573LC3B的Datasheet PDF文件第3页浏览型号HMC573LC3B的Datasheet PDF文件第4页浏览型号HMC573LC3B的Datasheet PDF文件第5页浏览型号HMC573LC3B的Datasheet PDF文件第6页 
HMC573LC3B  
v00.0906  
SMT GaAs MMIC x2 ACTIVE FREQUENCY  
MULTIPLIER, 8 - 22 GHz OUTPUT  
Typical Applications  
Features  
The HMC573LC3B is suitable for:  
High Output Power: +12 dBm  
• Clock Generation Applications:  
SONET OC-192 & SDH STM-64  
Low Input Power Drive: 0 to +6 dBm  
Fo Isolation: >20 dBc @ Fout= 16 GHz  
100 KHz SSB Phase Noise: -134 dBc/Hz  
Single Supply: +5V@ 92 mA  
• Point-to-Point & VSAT Radios  
• Test Instrumentation  
• Military & Space  
7
RoHS Compliant 3x3 mm SMT Package  
Functional Diagram  
General Description  
The HMC573LC3B is a x2 active broadband frequ-  
ency multiplier utilizing GaAs PHEMT technology in a  
leadless RoHS compliant SMT package. When driven  
by a +5 dBm signal, the multiplier provides +12 dBm  
typical output power from 8 to 22 GHz. The Fo and  
3Fo isolations are >20 dBc and >25 dBc respectively  
at 16 GHz. The HMC573LC3B is ideal for use in LO  
multiplier chains for Pt to Pt & VSAT Radios yielding  
reduced parts count vs. traditional approaches. The  
low additive SSB Phase Noise of -134 dBc/Hz at  
100 kHz offset helps maintain good system noise  
performance. The RoHS packaged HMC573LC3B  
eliminates the need for wire bonding, and allows the  
use of surface mount manufacturing techniques.  
Electrical Specifications, TA = +25°C, Vdd = +5V, 5 dBm Drive Level  
Parameter  
Min.  
Typ.  
4 - 11  
8 - 22  
12  
Max.  
Units  
GHz  
GHz  
dBm  
dBc  
Frequency Range, Input  
Frequency Range, Output  
Output Power  
9
Fo Isolation (with respect to output level)  
3Fo Isolation (with respect to output level)  
4Fo Isolation (with respect to output level)  
Input Return Loss  
20  
25  
dBc  
15  
dBc  
10  
dB  
Output Return Loss  
10  
dB  
SSB Phase Noise (100 kHz Offset)  
-134  
92  
dBc/Hz  
mA  
Supply Current (Idd) (Vdd = 5V, Vgg = -1.25V Typ.)  
*Adjust Vgg between -1.5 and ~1.1V to achieve Idd = 92 mA  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
7 - 88  

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