Datasheet > HMC5445LS6

HMC5445LS6

更新时间： 2024-02-02 02:44:56

品牌	Logo	应用领域
HITTITE		射频微波
页数	文件大小	规格书
8页	584K
描述
Wide Band Medium Power Amplifier,

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技术参数
数据手册

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HMC5445LS6 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	8.34
射频/微波设备类型：	WIDE BAND MEDIUM POWER	Base Number Matches：	1

HMC5445LS6 数据手册

HMC5445LS6

v01.0613

GaAs phemt mmIC 1 wAtt

POweR AmPLIFIeR, 24 - 27 Ghz

Fꢂaꢀurꢂs

typical Applicaꢀions

The HMC5445LS6 is ideal for:

Saturated Output Power: +31.5 dBm @ 23% PAE

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• VSAT

High Output IP3: +40 dBm

High Gain: 26 dB

DC Supply: +6V @ 750 mA

• Military & Space

No External Matching Required

16 Lead Ceramic 6 x 6 mm SMT Package: 36 mm²

Funcꢀional Diagraꢁ

Gꢂnꢂral Dꢂscripꢀion

TheHMC5445LS6isathree-stageGaAspHEMTMMIC

1 Watt Power Ampliﬁer which operates between

24 and 27 GHz. The HMC5445LS6 provides 26 dB of

gain, and +31 dBm of saturated output power and 18%

PAE from a +6V supply. The RF I/Os are DC blocked

and matched to 50 Ohms for ease of integration into

Multi-Function-Modules (MFMs). The HMC5445LS6

eliminates the need for wire bonding and allows the

use of surface mount manufacturing techniques.

elꢂcꢀrical Spꢂciﬁcaꢀions, t_A= +25 °C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 750 ꢁA ^[1]

Parameter

Min.

Typ.

24 - 27

Max.

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

0.03

dB/ °C

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

30.5

31.5

dBm

Output Third Order Intercept (IP3)^[2]

Total Supply Current (Idd)

750

[1] Adjust Vgg between -2 to 0V to achieve Idd = 750 mA typical.

[2] Measurement taken at +6V @ 750 mA, Pout / Tone = +19 dBm

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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