Datasheet > HMC536MS8G_08

HMC536MS8G_08

更新时间： 2022-11-07 16:57:15

品牌	Logo	应用领域
HITTITE		开关
页数	文件大小	规格书
6页	199K
描述
GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6 GHz

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HMC536MS8G_08 数据手册

HMC536MS8G / 536MS8GE

v03.0806

GaAs MMIC POSITIVE CONTROL

T/R SWITCH, DC - 6 GHz

Typical Applications

Features

Input P0.1dB: +34 dBm @ +5V

Insertion Loss: 0.5 dB

The HMC536MS8G / HMC536MS8GE is ideal for:

• Cellular/PCS/3G Infrastructure

• ISM/MMDS/WiMAX

Positive Control: +3V or +5V

MS8G SMT Package, 14.8 mm²

Isolation: 27 dB

• CATV/CMTS

• Test Instrumentation

Very Fast Switching Speed

Included in the HMC-DK005 Designer’s Kit

Functional Diagram

General Description

The HMC536MS8G & HMC536MS8GE are DC to

6 GHz GaAs MMIC T/R switches in 8 lead MSOP8G

surface mount packages with an exposed ground

paddle. The switch is ideal for cellular/PCS/3G

basestation applications featuring low 0.5 dB inser-

tion loss and +55 dBm input IP3. Power handling is

excellent up through 6 GHz with the switch offering

a P0.1dB compression point of +29 dBm at +3 volts

control. On-chip circuitry allows positive voltage con-

trol of 0/+3 volts or 0/+5 volts at very low DC currents.

Electrical Speciﬁcations, T_A= +25° C, Vctl = 0/+3 Vdc to +5 Vdc, 50 Ohm System

Parameter

Frequency

Min.

Typ.

Max.

Units

DC - 3.0 GHz

DC - 4.5 GHz

DC - 6.0 GHz

0.5

0.6

0.7

0.8

0.9

1.0

Insertion Loss

DC - 4.0 GHz

4.0 - 5.0 GHz

5.0 - 6.0 GHz

Isolation (RFC to RF1/RF2)

DC - 3.0 GHz

3.0 - 4.0 GHz

4.0 - 6.0 GHz

Return Loss

Input Power for 0.1 dB Compression

(Vctl = 3V)

(Vctl = 5V)

0.5 - 6.0 GHz

dBm

0.5 - 1.0 GHz

1.0 - 3.0 GHz

3.0 - 6.0 GHz

dBm

Input Third Order Intercept

(Two-Tone Input Power = +7 dBm Each Tone)

(Vctl = 3V, 5V)

Switching Speed

tRISE, tFALL (10/90%

RF)

tON, tOFF (50% CTL to 10/90% RF)

DC - 6.0 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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