Datasheet > HMC524A

HMC524A

更新时间： 2024-11-15 14:57:51

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
24页	500K
描述
GaAs MMIC I/Q混频器22 - 32 GHz

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HMC524A 数据手册

22 GHz to 32 GHz,

GaAs, MMIC, I/Q Mixer

Data Sheet

HMC524ALC3B

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Passive: no dc bias required

Conversion loss: 9 dB (typical)

Image rejection: 20 dB (typical)

LO to RF isolation: 35 dB (typical)

LO to IF isolation: 25 dB (typical)

IP3: 18 dBm (typical)

P1dB: 17 dBm (typical)

IF pin frequency: dc − 4.5 GHz

12-lead, 3 mm × 3 mm SMT ceramic package

HMC524ALC3B

GND

90°HYBRID

GND

APPLICATIONS

Point to point radios

Point to multipoint radios and VSAT

Test equipment and sensors

Military end use

PACKAGE

BASE

GND

Figure 1.

GENERAL DESCRIPTION

The HMC524ALC3B is a compact gallium arsenide (GaAs),

monolithic microwave integrated circuit (MMIC), in phase

quadrature (I/Q) mixer in a leadless RoHS compliant surface-

mount (SMT) ceramic package. This device can be used as either

an image reject mixer or a single-sideband upconverter. The

mixer uses two standard, double balanced mixer cells and a 90°

hybrid coupler fabricated in a GaAs, metal–semiconductor field

effect transistor (MESFET) process. A low frequency quadrature

hybrid produces a 100 MHz IF output.

This device is a much smaller alternative to hybrid style image

reject mixers and single-sideband upconverter assemblies. The

HMC524ALC3B eliminates the need for wire bonding, allowing

use of surface-mount manufacturing techniques.

Rev. A

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