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HMC510LP5 PDF预览

HMC510LP5

更新时间: 2024-11-14 04:22:03
品牌 Logo 应用领域
HITTITE 振荡器压控振荡器输出元件
页数 文件大小 规格书
8页 320K
描述
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 8.45 - 9.55 GHz

HMC510LP5 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:TransferredReach Compliance Code:compliant
ECCN代码:3A001.A.11.B风险等级:5
Is Samacsys:N最大控制电压:13 V
最小控制电压:2 VJESD-609代码:e0
安装特点:SURFACE MOUNT偏移频率:100 kHz
最大工作频率:9550 MHz最小工作频率:8450 MHz
最高工作温度:85 °C最低工作温度:-40 °C
振荡器类型:VOLTAGE CONTROLLED OSCILLATOR输出功率:10 dBm
相位噪声:-116 dBc/Hz物理尺寸:5.1mm x 5.1mm x 1.0mm
最大压摆率:360 mA最大供电电压:5.25 V
最小供电电压:4.75 V标称供电电压:5 V
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

HMC510LP5 数据手册

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HMC510LP5 / 510LP5E  
v00.0606  
MMIC VCO w/ HALF FREQUENCY OUTPUT  
& DIVIDE-BY-4, 8.45 - 9.55 GHz  
Typical Applications  
Features  
Low noise MMIC VCO w/Half Frequency, Divide-by-4  
Outputs for:  
Dual Output: Fo = 8.45 - 9.55 GHz  
Fo/2 = 4.225 - 4.775 GHz  
• Point to Point/Multipoint Radio  
• Test Equipment & Industrial Controls  
• SATCOM  
Pout: +13 dBm  
Phase Noise: -116 dBc/Hz @100 kHz Typ.  
No External Resonator Needed  
QFN Leadless SMT Package, 25 mm2  
• Military End-Use  
Functional Diagram  
General Description  
The HMC510LP5 & HMC510LP5E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.  
The HMC510LP5 & HMC510LP5E integrate resona-  
tors, negative resistance devices, varactor diodes  
and feature half frequency and divide-by-4 outputs.  
The VCO’s phase noise performance is excellent over  
temperature, shock, and process due to the oscillator’s  
monolithic structure. Power output is +13 dBm typical  
from a +5V supply voltage. The prescaler and RF/2  
functions can be disabled to conserve current if not  
required. The voltage controlled oscillator is packaged  
in a leadless QFN 5x5 mm surface mount package,  
and requires no external matching components.  
11  
Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V  
Parameter  
Min.  
Typ.  
Max.  
Units  
Fo  
Fo/2  
8.45 - 9.55  
4.225 - 4.775  
GHz  
GHz  
Frequency Range  
Power Output  
RFOUT  
RFOUT/2  
RFOUT/4  
+10  
+8  
-8  
+15  
+14  
-4  
dBm  
dBm  
dBm  
SSB Phase Noise @ 100 kHz Offset,  
Vtune= +5V @ RFOUT  
-116  
dBc/Hz  
Tune Voltage  
Vtune  
2
13  
360  
10  
V
Supply Current  
Icc(Dig) + Icc(Amp) + Icc(RF)  
270  
315  
2
mA  
μA  
dB  
Tune Port Leakage Current (Vtune= 13V)  
Output Return Loss  
Harmonics/Subharmonics  
1/2  
2nd  
3rd  
40  
15  
40  
dBc  
dBc  
dBc  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= 5V  
Frequency Drift Rate  
6
MHz pp  
MHz/V  
MHz/°C  
20  
0.8  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 126  

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