HMC487LP5ETR

更新时间： 2024-01-13 14:43:12

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HITTITE		射频和微波射频放大器微波放大器功率放大器
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HMC487LP5ETR 数据手册

HMC487LP5 / 487LP5E

v01.0705

SURFACE MOUNT PHEMT 2 WATT POWER

AMPLIFIER, 9 - 12 GHz

Typical Applications

Features

The HMC487LP5 / HMC487LP5E is ideal for use as a

power ampliﬁer for:

Saturated Power: +33 dBm @ 20% PAE

Output IP3: +36 dBm

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Test Equipment and Sensors

• Military End-Use

Gain: 20 dB

+7V @ 1300 mA Supply

50 Ohm Matched Input/Output

25 mm²Leadless SMT Package

Functional Diagram

General Description

The HMC487LP5 & HMC487LP5E are high dynamic

range GaAs PHEMT MMIC 2 Watt Power Ampliﬁers

housed in leadless 5 x 5 mm surface mount packages.

Operating from 9 to 12 GHz, the ampliﬁer provides

20 dB of gain, +33 dBm of saturated power and 20%

PAE from a +7V supply voltage. Output IP3 is +36 dBm

typical. The RF I/Os are DC blocked and matched

to 50 Ohms for ease of use. The HMC487LP5(E)

eliminate the need for wire bonding, allowing use of

surface mount manufacturing techniques.

Electrical Speciﬁcations, T_A= +25° C, Vdd1, 2, 3, 4, 5 = +7V, Idd = 1300 mA*

Parameter

Min.

Typ.

9 - 11

Max.

Min.

Typ.

11 - 12

Max.

0.07

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

0.05

0.07

0.05

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

Supply Current (Idd)(Vdd = +7V, Vgg = -0.3V Typ.)

1300

* Adjust Vgg between -2 to 0V to achieve Idd = 1300 mA typical.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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