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HMC481MP86ETR PDF预览

HMC481MP86ETR

更新时间: 2024-02-13 12:13:06
品牌 Logo 应用领域
HITTITE 放大器射频微波
页数 文件大小 规格书
6页 219K
描述
RF/Microwave Amplifier, 1 Func, BIPolar

HMC481MP86ETR 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Lifetime Buy包装说明:SL,4GW-LD,.085CIR
针数:4Reach Compliance Code:compliant
风险等级:5.05JESD-609代码:e3
安装特点:SURFACE MOUNT功能数量:1
端子数量:4最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:SL,4GW-LD,.085CIR电源:8 V
子类别:RF/Microwave Amplifiers最大压摆率:85 mA
表面贴装:YES技术:BIPOLAR
端子面层:Matte Tin (Sn)Base Number Matches:1

HMC481MP86ETR 数据手册

 浏览型号HMC481MP86ETR的Datasheet PDF文件第2页浏览型号HMC481MP86ETR的Datasheet PDF文件第3页浏览型号HMC481MP86ETR的Datasheet PDF文件第4页浏览型号HMC481MP86ETR的Datasheet PDF文件第5页浏览型号HMC481MP86ETR的Datasheet PDF文件第6页 
HMC481MP86 / 481MP86E  
v03.0810  
SiGe HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 5 GHz  
Typical Applications  
The HMC481MP86 / HMC481MP86E is an ideal RF/  
Features  
P1dB Output Power: +20 dBm  
IF gain block & LO or PA driver for:  
8
Gain: 20 dB  
• Cellular / PCS / 3G  
Output IP3: +33 dBm  
• Fixed Wireless & WLAN  
• CATV, Cable Modem & DBS  
• Microwave Radio& Test Equipment  
Cascadable 50 Ohm I/Os  
Single Supply: +6V to +12V  
Included in the HMC-DK001 Designer’s Kit  
Functional Diagram  
General Description  
The HMC481MP86 & HMC481MP86E are SiGe  
Heterojunction Bipolar Transistor (HBT) Gain Block  
MMIC SMT amplifiers covering DC to 5 GHz. This  
Micro-P packaged amplifier can be used as a cas-  
cadable 50 Ohm RF/IF gain stage as well as a LO  
or PA driver with up to +21 dBm output power. The  
HMC481MP86(E) offers 20 dB of gain with a +33 dBm  
output IP3 at 850 MHz while requiring only 74 mA  
from a single positive supply. The Darlington feedback  
pair used results in reduced sensitivity to normal  
process variations and excellent gain stability over  
temperature while requiring a minimal number of  
external bias components.  
Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C  
Parameter  
Min.  
Typ.  
Max.  
Units  
DC - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
4.0 - 5.0 GHz  
18.5  
15.5  
12.5  
10.5  
9.0  
20.0  
17.0  
14.0  
12.0  
10.5  
dB  
dB  
dB  
dB  
dB  
Gain  
Gain Variation Over Temperature  
Input Return Loss  
DC - 5 GHz  
0.008  
0.012  
dB/ °C  
DC - 1.0 GHz  
1.0 - 5.0 GHz  
13  
17  
dB  
dB  
DC - 1.0 GHz  
1.0 - 4.0 GHz  
4.0 - 5.0 GHz  
20  
25  
15  
dB  
dB  
dB  
Output Return Loss  
Reverse Isolation  
DC - 5 GHz  
18  
dB  
0.5 - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
4.0 - 5.0 GHz  
16  
15  
14  
12  
9
20  
18  
17  
15  
12  
dBm  
dBm  
dBm  
dBm  
dBm  
Output Power for 1 dB Compression (P1dB)  
0.5 - 2.0 GHz  
2.0 - 3.0 GHz  
3.0 - 4.0 GHz  
4.0 - 5.0 GHz  
33  
31  
29  
26  
dBm  
dBm  
dBm  
dBm  
Output Third Order Intercept (IP3)  
(Pout= 0 dBm per tone, 1 MHz spacing)  
DC - 2.0 GHz  
2.0 - 4.0 GHz  
4.0 - 5.0 GHz  
3.5  
4.0  
4.5  
dB  
dB  
dB  
Noise Figure  
Supply Current (Icq)  
74  
85  
mA  
Note: Data taken with broadband bias tee on device output.  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 1  

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