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HMC472LP4ETR

更新时间： 2024-12-01 21:21:43
品牌 Logo 应用领域
HITTITE 衰减器射频微波
页数 文件大小 规格书
8页 353K
描述
Variable Attenuator, 0MHz Min, 3800MHz Max, 3dB Insertion Loss-Max, GAAS, 4 X 4 MM, 1 MM HEIGHT, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, 24 PIN

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HMC472LP4ETR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：LCC24,.16SQ,20
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.25其他特性：CMOS COMPATIBLE
标称衰减：31.5 dB特性阻抗：50 Ω
构造：COMPONENT最大输入功率 (CW)：26.99 dBm
最大插入损耗：3 dBJESD-609代码：e3
安装特点：SURFACE MOUNT端子数量：24
最大工作频率：3800 MHz最小工作频率：
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：LCC24,.16SQ,20
电源：5 V射频/微波设备类型：VARIABLE ATTENUATOR
子类别：RF/Microwave Attenuators表面贴装：YES
技术：GAAS端子面层：Matte Tin (Sn)
Base Number Matches：1

HMC472LP4ETR 数据手册

 浏览型号HMC472LP4ETR的Datasheet PDF文件第2页浏览型号HMC472LP4ETR的Datasheet PDF文件第3页浏览型号HMC472LP4ETR的Datasheet PDF文件第4页浏览型号HMC472LP4ETR的Datasheet PDF文件第5页浏览型号HMC472LP4ETR的Datasheet PDF文件第6页浏览型号HMC472LP4ETR的Datasheet PDF文件第7页 
HMC472LP4 / 472LP4E  
v06.1108  
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL  
POSITIVE CONTROL ATTENUATOR, DC - 3.8 GHz  
5
Typical Applications  
Features  
The HMC472LP4(E) is ideal for:  
• 3G Infrastructure & access points  
• Cellular/3G, LTE & UMB  
0.5 dB LSB Steps to 31.5 dB  
Single Control Line Per Bit  
TTL/CMOS Compatible Control  
0.25 dB Typical Step Error  
• WiMAX, WiBN & Fixed Wireless  
• Test Equipment and Sensors  
• GSM, WCDMA & TD-SCDMA  
Single +5V Supply  
24 Lead Ceramic 4x4mm SMT Package: 16mmꢀ  
Included in the HMC-DK004 Designer’s Kit  
Functional Diagram  
General Description  
The HMC472LP4 & HMC472LP4E are broadband  
6-bit GaAs IC digital attenuators in low cost leadless  
surface mount packages. This single positive control  
line per bit digital attenuator incorporates off chip AC  
ground capacitors for near DC operation, making it  
suitable for a wide variety of RF and IF applications.  
Covering DC to 3.8 GHz, the insertion loss is less  
than 2.0 dB typical. The attenuator bit values are 0.5  
(LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of  
31.5 dB. Attenuation accuracy is excellent at 0.25 dB  
typical step error with an IIP3 of +45 dBm. Six TTL/  
CMOS control inputs are used to select each attenua-  
tion state. A single Vdd bias of +5V is required.  
Electrical Specifications,  
TA = +25° C, With Vdd = +5V & Vctl = 0/+5V (Unless Otherwise Noted)  
Parameter  
Frequency (GHz)  
Min.  
Typ.  
Max.  
Units  
DC - 1.5 GHz  
1.5 - 3.0 GHz  
3.0 - 3.8 GHz  
1.5  
2.0  
2.3  
1.8  
2.3  
3
dB  
dB  
dB  
Insertion Loss  
Attenuation Range  
DC - 3.8 GHz  
DC - 3.8 GHz  
31.5  
15  
dB  
dB  
Return Loss (RF1 & RF2, All Atten. States)  
Attenuation Accuracy: (Referenced to Insertion  
Loss)  
All Attenuation States  
0.5 - 3.5 dB States  
4.0 - 31.5 dB States  
All Attenuation States  
All Attenuation States  
DC - 1.0 GHz  
1.0 - 2.2 GHz  
1.0 - 2.2 GHz  
2.2 - 3.0 GHz  
3.0 - 3.8 GHz  
(0..20 + 3% of Atten. Setting) Max.  
(0.25 + 3% of Atten. Setting) Max.  
(0.15 + 4% of Atten. Setting) Max.  
(0.30 + 3% of Atten. Setting) Max  
(0.35 + 5% of Atten. Setting) Max.  
dB  
dB  
dB  
dB  
dB  
Input Power for 0.1 dB Compression  
0.1 - 3.8 GHz  
0.1 - 3.8 GHz  
20  
dBm  
Input Third Order Intercept Point  
(Two-Tone Input Power= 0 dBm Each Tone)  
REF - 15.5 dB States  
16.0 - 31.5 dB States  
45  
35  
dBm  
dBm  
Switching Characteristics  
DC - 3.8 GHz  
tRISE, tFALL (10/90% RF)  
130  
140  
ns  
ns  
tON, tOFF (50% CTL to 10/90% RF)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 140  
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