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HMC463_10 PDF预览

HMC463_10

更新时间: 2022-11-07 16:45:35
品牌 Logo 应用领域
HITTITE 放大器
页数 文件大小 规格书
8页 300K
描述
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz

HMC463_10 数据手册

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HMC463  
v10.1010  
GaAs PHEMT MMIC LOW NOISE  
AGC AMPLIFIER, 2 - 20 GHz  
1
Typical Applications  
The HMC463 is ideal for:  
• Telecom Infrastructure  
• Microwave Radio & VSAT  
• Military & Space  
Features  
Gain: 14 dB  
Noise Figure: 2.5 dB @ 10 GHz  
P1dB Output Power: +19 dBm @ 10 GHz  
Supply Voltage: +5V @ 60 mA  
50 Ohm Matched Input/Output  
Die Size: 3.05 x 1.29 x 0.1 mm  
• Test Instrumentation  
• Fiber Optics  
Functional Diagram  
General Description  
The HMC463 is a GaAs MMIC PHEMT Low Noise  
AGC Distributed Amplifier die which operates between  
2 and 20 GHz. The amplifier provides 14 dB of gain,  
2.5 dB noise figure and 19 dBm of output power at  
1 dB gain compression while requiring only 60 mA  
from a +5V supply. An optional gate bias (Vgg2) is  
provided to allow Adjustable Gain Control (AGC) of  
10 dB typical. Gain flatness is excellent at 0.15 dB  
from 6 - 18 GHz making the HMC463 ideal for EW,  
ECM and RADAR applications. The HMC463 ampli-  
fier can easily be integrated into Multi-Chip-Modules  
(MCMs) due to its small size. All data is with the  
chip in a 50 Ohm test fixture connected via 0.025mm  
(1 mil) diameter wire bonds of minimal length 0.31mm  
(12 mils).  
Vgg2: Optional Gate Bias for AGC  
Electrical Specifications, TA = +25° C, Vdd= 5V, Idd= 60 mA*  
Parameter  
Frequency Range  
Min.  
Typ.  
2.0 - 6.0  
15  
Max.  
Min.  
Typ.  
6.0 - 18.0  
14  
Max.  
Min.  
12  
Typ.  
18.0 - 20.0  
14  
Max.  
Units  
GHz  
dB  
Gain  
12  
12  
Gain Flatness  
1.0  
0.15  
0.015  
2.5  
0.15  
0.015  
3.5  
dB  
Gain Variation Over Temperature  
Noise Figure  
0.015  
3.0  
0.025  
4.0  
0.025  
3.7  
0.025  
4.0  
dB/ °C  
dB  
Input Return Loss  
12  
15  
14  
dB  
Output Return Loss  
11  
12  
10  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
16  
19  
13  
16  
11  
14  
dBm  
dBm  
dBm  
21  
20  
19  
31  
28  
26  
Supply Current  
(Idd) (Vdd= 5V, Vgg1= -0.9V Typ.)  
60  
80  
60  
80  
60  
80  
mA  
* Adjust Vgg1 between -1.5 to -0.5V to achieve Idd= 60 mA typical.  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
1 - 1  

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