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HMC462LP5TR PDF预览

HMC462LP5TR

更新时间: 2024-01-07 00:21:02
品牌 Logo 应用领域
HITTITE /
页数 文件大小 规格书
6页 668K
描述
Wide Band Low Power Amplifier, 1 Func, GAAS,

HMC462LP5TR 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:LCC32,.2SQ,20Reach Compliance Code:unknown
风险等级:5.67安装特点:SURFACE MOUNT
功能数量:1端子数量:32
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC32,.2SQ,20
电源:5 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:84 mA
表面贴装:YES技术:GAAS
Base Number Matches:1

HMC462LP5TR 数据手册

 浏览型号HMC462LP5TR的Datasheet PDF文件第2页浏览型号HMC462LP5TR的Datasheet PDF文件第3页浏览型号HMC462LP5TR的Datasheet PDF文件第4页浏览型号HMC462LP5TR的Datasheet PDF文件第5页浏览型号HMC462LP5TR的Datasheet PDF文件第6页 
HMC462LP5 / 462LP5E  
v04.1010  
GaAs pHEMT MMIC  
LOW NOISE AMPLIFIER, 2 - 20 GHz  
7
Typical Applications  
The HMC462LP5 / HMC462LP5E Wideband LNA is  
ideal for:  
Features  
Noise Figure: 2.5 dB @ 10 GHz  
Gain: 13 dB  
• Telecom Infrastructure  
• Microwave Radio & VSAT  
• Military EW, ECM & C3I  
• Test Instrumentation  
• Fiber Optics  
P1dB Output Power: +14.5 dBm @ 10 GHz  
Self-Biased: +5V @ 66mA  
50 Ohm Matched Input/Output  
25 mm2 Leadless SMT Package  
Functional Diagram  
General Description  
The HMC462LP5 & HMC462LP5E are GaAs MMIC  
pHEMT Low Noise Distributed Amplifiers in leadless  
5x5 mm surface mount packages which operate  
between 2 and 20 GHz. The self-biased amplifier  
provides 13 dB of gain, 2.5 to 3.5 dB noise figure and  
+14.5 dBm of output power at 1 dB gain compression  
while requiring only 66 mA from a single +5V supply.  
Gain flatness is excellent from 6 - 18 GHz making  
the HMC462LP5 & HMC462LP5E ideal for EW,  
ECM RADAR and test equipment applications. The  
wideband amplifier I/Os are internally matched to 50  
Ohms and are internally DC blocked.  
Electrical Specifications, TA = +25° C, Vdd= 5V  
Parameter  
Frequency Range  
Min.  
Typ.  
2 - 6  
14  
Max.  
Min.  
11  
Typ.  
6 - 14  
13  
Max.  
Min.  
10  
Typ.  
14 - 20  
12  
Max.  
Units  
GHz  
dB  
Gain  
12  
Gain Flatness  
0.5  
0.015  
3.0  
15  
0.5  
0.02  
2.5  
13  
0.5  
0.03  
4.0  
11  
dB  
Gain Variation Over Temperature  
Noise Figure  
0.025  
4.0  
0.03  
4.0  
0.04  
6.0  
dB/ °C  
dB  
Input Return Loss  
dB  
Output Return Loss  
12  
12  
8
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
12  
15  
11  
14  
9
12  
dBm  
dBm  
dBm  
17  
16  
15  
26  
25  
22  
Supply Current  
(Idd) (Vdd= 5V)  
66  
85  
66  
85  
66  
85  
mA  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
7 - 1  

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