Datasheet > HMC462LP5_10

HMC462LP5_10

更新时间： 2022-11-07 16:45:12

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	669K
描述
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz

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HMC462LP5_10 数据手册

HMC462LP5 / 462LP5E

v04.1010

GaAs pHEMT MMIC

LOW NOISE AMPLIFIER, 2 - 20 GHz

Typical Applications

The HMC462LP5 / HMC462LP5E Wideband LNA is

ideal for:

Features

Noise Figure: 2.5 dB @ 10 GHz

Gain: 13 dB

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military EW, ECM & C³I

• Test Instrumentation

• Fiber Optics

P1dB Output Power: +14.5 dBm @ 10 GHz

Self-Biased: +5V @ 66mA

50 Ohm Matched Input/Output

25 mm²Leadless SMT Package

Functional Diagram

General Description

The HMC462LP5 & HMC462LP5E are GaAs MMIC

pHEMT Low Noise Distributed Ampliﬁers in leadless

5x5 mm surface mount packages which operate

between 2 and 20 GHz. The self-biased ampliﬁer

provides 13 dB of gain, 2.5 to 3.5 dB noise ﬁgure and

+14.5 dBm of output power at 1 dB gain compression

while requiring only 66 mA from a single +5V supply.

Gain ﬂatness is excellent from 6 - 18 GHz making

the HMC462LP5 & HMC462LP5E ideal for EW,

ECM RADAR and test equipment applications. The

wideband ampliﬁer I/Os are internally matched to 50

Ohms and are internally DC blocked.

Electrical Speciﬁcations, T_A= +25° C, Vdd= 5V

Parameter

Frequency Range

Min.

Typ.

2 - 6

Max.

Min.

Typ.

6 - 14

Max.

Min.

Typ.

14 - 20

Max.

Units

GHz

Gain

Gain Flatness

0.5

0.015

3.0

0.5

0.02

2.5

0.5

0.03

4.0

Gain Variation Over Temperature

Noise Figure

0.025

4.0

0.03

4.0

0.04

6.0

dB/ °C

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

dBm

Supply Current

(Idd) (Vdd= 5V)

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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