HMC453QS16GE

更新时间： 2024-11-29 13:02:15

品牌	Logo	应用领域
HITTITE		功率放大器
页数	文件大小	规格书
22页	1023K
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HMC453QS16GE 数据手册

HMC453QS16G / 453QS16GE

v01.0205

InGaP HBT 1.6 WATT POWER

AMPLIFIER, 0.4 - 2.2 GHz

Typical Applications

Features

The HMC453QS16G / HMC453QS16GE is ideal for

applications requiring a high dynamic range ampliﬁer:

Output IP3: +51 dBm

21.5 dB Gain @ 400 MHz

• GSM, GPRS & EDGE

• CDMA & W-CDMA

• CATV/Cable Modem

• Fixed Wireless & WLL

8 dB Gain @ 2100 MHz

45% PAE @ +32 dBm Pout

+25 dBm CDMA2000 Channel Power@ -45 dBc ACP

Single +5V Supply

Integrated Power Control (VPD)

QSOP16G SMT Package: 29.4 mm²

General Description

Functional Diagram

The HMC453QS16G & HMC453QS16GE are high

dynamic range GaAs InGaP Heterojunction Bipolar

Transistor (HBT) 1.6 watt MMIC power ampliﬁers

operating between 0.4 and 2.2 GHz. Packaged

in a miniature 16 lead QSOP plastic package, the

ampliﬁer gain is typically 21.5 dB at 0.4 GHz and 8 dB

at 2.1 GHz. Utilizing a minimum number of external

components and a single +5V supply, the ampliﬁer

output IP3 can be optimized to +47 dBm at 0.4 GHz

or +51 dBm at 2.1 GHz. The power control (VPD)

can be used for full power down or RF output power/

current control. The high output IP3 and PAE make

the HMC453QS16G & HMC453QS16GE ideal power

ampliﬁers for Cellular/PCS/3G, WLL, ISM and Fixed

Wireless applications.

Electrical Specifications, T_A= +25°C, Vs= +5V, VPD = +5V ^[1]

Parameter

Frequency Range

Gain

Min.

Typ.

400 - 410

21.5

Max. Min.

Typ.

450 - 496

20.5

Max. Min.

Typ.

810 - 960

Max. Min.

Typ. Max. Min. Typ. Max. Units

1710 - 1990

2010 - 2170

MHz

Gain Variation Over

Temperature

dB /

°C

0.012 0.02

Input Return Loss

Output Return Loss

Output Power for 1dB

Compression (P1dB)

32.25

32.5

28.5 31.5

33.5

dBm

Saturated Output

Power (Psat)

Output Third Order

Intercept (IP3) [2]

Noise Figure

8.5

725

7.5

725

6.5

725

Supply Current (Icq)

Control Current (IPD)

725

[1] Speciﬁcations and data reﬂect HMC453QS16G measured using the respective application circuits for each designated frequency band found

herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.

[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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HMC453QS16GE 替代型号

型号	品牌	替代类型	描述	数据表
HMC453QS16G	ADI	类似代替	IC AMP GP 400MHZ-2.2GHZ 16QSOP
HMC453QS16G	HITTITE	功能相似	InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz

与HMC453QS16GE相关器件

型号	品牌	获取价格	描述	数据表
HMC453QS16GETR	ADI	获取价格	HMC453QS16GETR
HMC453QS16GTR	ADI	获取价格	IC AMP CDMA 400MHZ-2.2GHZ 16QSOP
HMC453ST89	HITTITE	获取价格	InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
HMC453ST89	ADI	获取价格	1.6 W功率放大器，采用SMT封装，0.4 - 2.2 GHz
HMC453ST89_10	HITTITE	获取价格	InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
HMC453ST89E	HITTITE	获取价格	InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
HMC453ST89ETR	ADI	获取价格	HMC453ST89ETR
HMC453ST89ETR	HITTITE	获取价格	Wide Band Medium Power Amplifier,
HMC453ST89TR	HITTITE	获取价格	HMC453ST89TR
HMC454	ADI	获取价格	? 瓦特高IP3放大器，采用SMT封装，0.4 - 2.5 GHz

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