HMC450QS16G / 450QS16GE
v02.0406
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 0.8 - 1.0 GHz
Typical Applications
Features
The HMC450QS16G / HMC450QS16GE is ideal for
Gain: 26 dB
power and driver amplifier applications:
32% PAE @ 28.5 dBm Output Power
+40 dBm Output IP3
• GSM, GPRS, & Edge
• CDMA & WCDMA
Integrated Power Control (Vpd)
Included in the HMC-DK002 Designer’s Kit
• Base Stations & Repeaters
11
Functional Diagram
General Description
The HMC450QS16G & HMC450QS16GE are high
efficiency GaAs InGaP HBT Medium Power MMIC
amplifiers operating between 800 and 1000 MHz. The
amplifier is packaged in a low cost, surface mount
16 lead package and offers the same pinout and
functionality as the higher band HMC413QS16G 1.6-
2.3 GHz PA. With a minimum of external components,
the amplifier provides 26 dB of gain, +40 dBm OIP3
and +28.5 dBm of saturated power from a +5V supply
voltage.Theintegratedpowercontrol(Vpd)canbeused
for full power down or RF output power/current control.
The combination of high gain and high output IP3
make the HMC450QS16G & HMC450QS16GE ideal
linear drivers for Cellular, PCS & 3G applications.
Electrical Specifications, TA = +25° C, Vs = +5V, Vpd = +4V [1]
Parameter
Min.
Typ.
0.8 - 1.0
26
Max.
Units
GHz
dB
Frequency Range
Gain
23
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
0.015
17
0.025
dB/°C
dB
13
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
23
37
26
dBm
28.5
40
8
dBm
dBm
dB
[2]
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
310
12
mA
mA
ns
tON, tOFF
10
[1] Specifications and data reflect HMC450QS16G measured using the application circuit found herein. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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