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HMC442LM1TR

更新时间： 2024-02-02 15:53:20

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器功率放大器
页数	文件大小	规格书
8页	269K
描述
Wide Band Low Power Amplifier,

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技术参数
数据手册

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HMC442LM1TR 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LCC8,.2SQ,40
针数：	8	Reach Compliance Code：	compliant
风险等级：	5.78	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	10.5 dB
最大输入功率 (CW)：	16 dBm	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	8
最大工作频率：	24000 MHz	最小工作频率：	17500 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	LCC8,.2SQ,40
电源：	5 V	射频/微波设备类型：	WIDE BAND LOW POWER
表面贴装：	YES	技术：	GAAS

HMC442LM1TR 数据手册

HMC442LM1

v01.0807

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 17.5 - 24.0 GHz

Typical Applications

Features

The HMC442LM1 is an ideal gain block or driver

ampliﬁer for:

Saturated Power: +23 dBm @ 27% PAE

Gain: 14 dB

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• VSAT

Supply Voltage: +5V

50 Ohm Matched Input/Output

Functional Diagram

General Description

The HMC442LM1 is a broadband 17.5 to 24 GHz

GaAs PHEMT MMIC Medium Power Ampliﬁer in a

SMT leadless chip carrier package. The LM1 is a true

surface mount broadband millimeterwave package

offering low loss & excellent I/O match, preserving

MMIC chip performance. The ampliﬁer provides

14 dB of gain and +23 dBm of saturated power at

27% PAE from a +5V supply voltage. This 50 Ohm

matched ampliﬁer has integrated DC blocks on RF

in and out and makes an ideal linear gain block,

transmit chain driver or LO driver for HMC SMT mixers.

As an alternative to chip-and-wire hybrid assem-

blies the HMC442LM1 eliminates the need for

wirebonding, thereby providing a consistent con-

nection interface for the customer.

Electrical Speciﬁcations, T_A= +25° C, Vdd = 5V, Idd = 85 mA*

Parameter

Min.

Typ.

Max.

Min.

10.5

Typ.

21.0 - 24.0

Max.

0.03

Units

GHz

Frequency Range

Gain

17.5 - 21.0

10.5

0.02

Gain Variation Over Temperature

Input Return Loss

0.03

0.02

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

18.5

21.5

23.5

dBm

Output Third Order Intercept (IP3)

Noise Figure

6.5

Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.)

*Adjust Vgg between -1.5 to -0.5V to achieve Idd = 85 mA typical.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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