Datasheet > HMC442LC3BTR

HMC442LC3BTR

更新时间： 2024-01-28 15:35:21

品牌	Logo	应用领域
HITTITE		射频微波
页数	文件大小	规格书
6页	221K
描述
Wide Band Medium Power Amplifier,

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技术参数
数据手册

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HMC442LC3BTR 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.63
射频/微波设备类型：	WIDE BAND MEDIUM POWER	Base Number Matches：	1

HMC442LC3BTR 数据手册

HMC442LC3B

v02.1208

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 17.5 - 25.5 GHz

Typical Applications

Features

The HMC442LC3B is an ideal gain block or driver

ampliﬁer for:

Gain: 13 dB

Saturated Power: +23 dBm @ 26% PAE

Supply Voltage: +5V

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• LO Driver for HMC Mixers

• Military EW & ECM

50 Ohm Matched Input/Output

RoHS Compliant 3 x 3 mm SMT package

Functional Diagram

General Description

The HMC442LC3B is an efficient GaAs PHEMT MMIC

Medium Power Ampliﬁer housed in a leadless “Pb free”

RoHS compliant SMT package. Operating between

17.5 and 25.5 GHz, the ampliﬁer provides 13 dB of

gain, +23 dBm of saturated power and 26% PAE from

a +5V supply voltage. This 50 Ohm matched ampliﬁer

does not require any external components, making

it an ideal linear gain block or driver for HMC SMT

mixers. The HMC442LC3B allows the use of surface

mount manufacturing techniques.

Electrical Speciﬁcations, T_A= +25° C, Vdd = +5V, Idd = 84 mA*

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

0.03

Units

GHz

Frequency Range

Gain

17.5 - 21.0

21.0 - 24.0

24.0 - 25.5

0.02

Gain Variation Over Temperature

Input Return Loss

0.03

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

23.5

dBm

Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.)

*Adjust Vgg between -1.5 to -0.5V to achieve Idd = 84 mA typical.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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