Datasheet > HMC430

HMC430

更新时间： 2023-12-20 18:45:59

品牌	Logo	应用领域
亚德诺 - ADI		放大器缓冲放大器
页数	文件大小	规格书
6页	650K
描述
采用SMT封装的VCO，带有缓冲放大器，5.0 - 5.5 GHz

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数据手册

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HMC430 数据手册

HMC430LP4 / 430LP4E

v06.1106

MMIC VCO w/ BUFFER

AMPLIFIER, 5.0 - 5.5 GHz

Typical Applications

Features

Low noise MMIC VCO w/Buffer Ampliﬁer

for C-Band applications such as:

Pout: +2 dBm

Phase Noise: -103 dBc/Hz @100 kHz

No External Resonator Needed

Single Supply: 3V @ 27 mA

16mm²Leadless SMT Package

• 802.11a & HiperLAN WLAN

• VSAT Radios

• UNII & Point-to-Point Radios

Functional Diagram

General Description

The HMC430LP4 & HMC430LP4E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC VCOs

with integrated resonators, negative resistance

devices, varactor diodes, and buffer ampliﬁers. The

VCO’s phase noise performance is excellent over

temperature, shock, vibration and process due to the

oscillator’s monolithic structure. Power output is 2

dBm typical from a 3V supply voltage. The voltage

controlled oscillator is packaged in a low cost leadless

QFN 4 x 4 mm surface mount package.

Electrical Speciﬁcations, T_A= +25° C, Vcc = +3V

Parameter

Frequency Range

Min.

-1

Typ.

5.0 - 5.5

Max.

Units

GHz

Power Output

dBm

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

-103

dBc/Hz

Tune Voltage (Vtune)

Supply Current (Icc) (Vcc= +3.0V)

Tune Port Leakage Current

Output Return Loss

μA

Harmonics

2nd

3rd

-15

-25

dBc

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= +5V

Frequency Drift Rate

MHz pp

MHz/V

MHz/°C

0.8

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

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