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HMC429LP4TR PDF预览

HMC429LP4TR

更新时间: 2024-01-04 23:16:55
品牌 Logo 应用领域
HITTITE 射频微波
页数 文件大小 规格书
6页 238K
描述
Narrow Band Low Power Amplifier,

HMC429LP4TR 技术参数

生命周期:Contact Manufacturer包装说明:LCC24,.16SQ,20
Reach Compliance Code:compliant风险等级:5.66
最大控制电压:10 V最小控制电压:
安装特点:SURFACE MOUNT端子数量:24
偏移频率:100 kHz最大工作频率:5000 MHz
最小工作频率:4450 MHz最高工作温度:85 °C
最低工作温度:-40 °C振荡器类型:VOLTAGE CONTROLLED OSCILLATOR
输出功率:4 dBm封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC24,.16SQ,20相位噪声:-105 dBc/Hz
物理尺寸:4.1mm x 4.1mm x 1.0mm最大供电电压:3.25 V
最小供电电压:2.75 V标称供电电压:3 V
表面贴装:YESBase Number Matches:1

HMC429LP4TR 数据手册

 浏览型号HMC429LP4TR的Datasheet PDF文件第2页浏览型号HMC429LP4TR的Datasheet PDF文件第3页浏览型号HMC429LP4TR的Datasheet PDF文件第4页浏览型号HMC429LP4TR的Datasheet PDF文件第5页浏览型号HMC429LP4TR的Datasheet PDF文件第6页 
HMC429LP4 / 429LP4E  
v02.0805  
MMIC VCO w/ BUFFER  
AMPLIFIER, 4.45 - 5.0 GHz  
Typical Applications  
Features  
Low noise MMIC VCO w/Buffer Amplifier for:  
• 802.11a, HiperLAN WLAN  
Pout: +4.0 dBm  
Phase Noise: -105 dBc/Hz @100 KHz  
No External Resonator Needed  
Single Supply: 3V @ 30 mA  
QFN Leadless SMT Package, 16 mm2  
• VSAT, UNII & Microwave Radio  
• Test Equipment & Industrial Controls  
• Military  
Functional Diagram  
General Description  
The HMC429LP4 & HMC429LP4E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC VCOs  
with integrated resonators, negative resistance  
devices, varactor diodes, and buffer amplifiers.  
Covering 4.45 to 5.0 GHz, the VCO’s phase noise  
performance is excellent over temperature, shock,  
vibration and process due to the oscillator’s monolithic  
structure. Power output is 4.0 dBm typical from a  
single supply of 3.0V @ 30mA. The voltage controlled  
oscillator is packaged in a low cost leadless QFN 4x4  
mm surface mount package.  
11  
Electrical Specifications, TA = +25° C, Vcc = +3V  
Parameter  
Frequency Range  
Min.  
1.0  
0
Typ.  
4.45 - 5.0  
4.0  
Max.  
Units  
GHz  
dBm  
dBc/Hz  
V
Power Output  
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output  
Tune Voltage (Vtune)  
-105  
10  
10  
Supply Current (Icc) (Vcc = +3.0V)  
Tune Port Leakage Current  
30  
6
mA  
μA  
Output Return Loss  
dB  
Harmonics  
2nd  
3rd  
-11  
-23  
dBc  
dBc  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= +5V  
Frequency Drift Rate  
10  
14  
MHz pp  
MHz/V  
MHz/°C  
0.4  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 72  

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