Datasheet > 射频和微波 > 射频/微波放大器> HMC385LP4ETR

HMC385LP4ETR

更新时间： 2024-09-17 13:08:23

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器缓冲放大器
页数	文件大小	规格书
6页	352K
描述
Narrow Band Low Power Amplifier,

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技术参数
数据手册

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HMC385LP4ETR 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.65	射频/微波设备类型：	NARROW BAND LOW POWER
Base Number Matches：	1

HMC385LP4ETR 数据手册

HMC385LP4 / 385LP4E

v02.0705

MMIC VCO w/ BUFFER

AMPLIFIER, 2.25 - 2.5 GHz

Typical Applications

Features

Low noise MMIC VCO w/Buffer Ampliﬁer for:

• Wireless Infrastructure

• Industrial Controls

Pout: +4.5 dBm

Phase Noise: -115 dBc/Hz @100 KHz

No External Resonator Needed

Single Supply: 3V @ 35 mA

QFN Leadless SMT Package, 16 mm²

• Test Equipment

• Military

Functional Diagram

General Description

The HMC385LP4 & HMC385LP4E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC VCOs

with integrated resonators, negative resistance

devices, varactor diodes, and buffer ampliﬁers.

Covering 2.25 to 2.5 GHz, the VCO’s phase noise

performance is excellent over temperature, shock,

vibration and process due to the oscillator’s monolithic

structure. Power output is 4.5 dBm typical from a

single supply of 3V @ 35mA. The voltage controlled

oscillator is packaged in a low cost leadless QFN

4x4 mm surface mount package.

Electrical Specifications, T_A= +25° C, Vcc = +3V

Parameter

Frequency Range

Min.

1.5

Typ.

2.25 - 2.5

4.5

Max.

Units

GHz

dBm

dBc/Hz

Power Output

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

Tune Voltage (Vtune)

-115

Supply Current (Icc) (Vcc = +3.0V)

Tune Port Leakage Current

μA

Output Return Loss

Harmonics

2nd

3rd

-7

-23

dBc

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= +5V

Frequency Drift Rate

2.0

-2

MHz pp

MHz/V

MHz/°C

0.25

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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