HMC356LP3

更新时间： 2024-02-21 13:18:19

品牌	Logo	应用领域
HITTITE		放大器射频微波
页数	文件大小	规格书
6页	318K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz

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技术参数
数据手册

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HMC356LP3 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.81	射频/微波设备类型：	WIDE BAND LOW POWER

HMC356LP3 数据手册

HMC356LP3

v01.0604

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 350 - 550 MHz

Typical Applications

The HMC356LP3 is ideal for

basestation receivers:

Features

Noise Figure: ≤1.0 dB

+38 dBm Output IP3

• GSM 450 & GSM 480

• CDMA 450

Gain: 17 dB

Very Stable Gain vs. Supply & Temperature

Single Supply: +5.0V @ 104 mA

50 Ohm Matched Output

• Private Land Mobile Radio

Functional Diagram

General Description

The HMC356LP3 high dynamic range GaAs

PHEMT MMIC Low Noise Ampliﬁer is ideal for GSM

& CDMA cellular basestation and Mobile Radio

front-end receivers operating between 350 and 550

MHz. This LNA has been optimized to provide 1.0

dB noise ﬁgure, 17 dB gain and +38 dBm output IP3

from a single supply of +5.0V @ 104 mA. Input and

output return losses are 15 dB typical, with the LNA

requiring only four external components to optimize

the RF input match, RF ground and DC bias. The

HMC356LP3 shares the same package and pinout

with the HMC372LP3 high IP3 LNA. A low cost,

leadless 3x3 mm (LP3) SMT QFN package houses

the low noise ampliﬁer.

Electrical Speciﬁcations,T_A= +25° C, Vs = +5V

Parameter

Min.

Typ.

350 - 550

Max.

Units

MHz

Frequency Range

Gain

Gain Variation Over Temperature

Noise Figure

0.0032

1.0

0.010

1.4

dB / °C

Input Return Loss

Output Return Loss

Reverse Isolation

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

dBm

22.5

Output Third Order Intercept (IP3)

(-20 dBm Input Power per tone, 1 MHz tone spacing)

dBm

Supply Current (Idd)

104

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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