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HMC351S8ETR PDF预览

HMC351S8ETR

更新时间: 2024-11-05 19:54:35
品牌 Logo 应用领域
HITTITE /
页数 文件大小 规格书
6页 162K
描述
Double Balanced Mixer

HMC351S8ETR 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.64射频/微波设备类型:DOUBLE BALANCED
Base Number Matches:1

HMC351S8ETR 数据手册

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HMC351S8 / 351S8E  
v04.0408  
GaAs MMIC HIGH IP3 DOUBLE-  
BALANCED MIXER, 0.7 - 1.2 GHz  
Typical Applications  
Features  
The HMC351S8 / HMC351S8E is ideal for:  
• Cellular Basestations  
Conversion Loss: 9.0 dB  
LO/IF Isolation: 35 dB  
LO/RF Isolation: 42 dB  
Input IP3: +25 dBm  
• Cable Modems  
• Fixed Wireless Access Systems  
Input IP2: +48 dBm  
9
Functional Diagram  
General Description  
The HMC351S8 & HMC351S8E are double balanced  
mixers in 8 lead plastic surface mount packages.  
The passive GaAs schottky diode mixer implements  
planar on chip baluns and requires no external com-  
ponents. The mixer can be used as an upconverter,  
down converter, or modulator. The mixer provides 9  
dB conversion loss and +25 dBm IIP3 with LO drive  
levels of +19 dBm. The design was optimized for low  
cost high volume applications where high converter  
linearity is required. The high LO suppression of 42  
dB yields excellent carrier suppression for modulator  
applications.  
Electrical Specifications, TA = +25° C  
LO = +19 dBm, IF = 100 MHz  
Units  
Parameter  
Min.  
Typ.  
Max.  
Frequency Range, RF & LO  
Frequency Range, IF  
Conversion Loss  
Noise Figure (SSB)  
LO to RF Isolation  
LO to IF Isolation  
RF to IF Isolation  
IP3 (Input)  
0.7 - 1.2  
GHz  
GHz  
dB  
DC - 0.3  
9
11.5  
11.5  
9
dB  
36  
31  
9
42  
35  
13  
25  
48  
16  
dB  
dB  
dB  
22  
40  
12  
dBm  
dBm  
dBm  
IP2 (Input)  
1 dB Compression (Input)  
*Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
9 - 216  

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