Datasheet > HMC349AMS8GETR

HMC349AMS8GETR

更新时间： 2024-11-05 19:55:35

品牌	Logo	应用领域
亚德诺 - ADI		射频微波光电二极管
页数	文件大小	规格书
11页	340K
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HMC349AMS8GETR

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数据手册
替代型号

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HMC349AMS8GETR 数据手册

High Isolation, Nonreflective,

GaAs, SPDT Switch,100 MHz to 4 GHz

HMC349AMS8G

Data Sheet

FEATURES

FUNCTIONAL BLOCK DIAGRAM

RF2

Nonreflective, 50 Ω design

HMC349AMS8G

High isolation: 57 dB to 2 GHz

Low insertion loss: 0.9 dB to 2 GHz

High input linearity

1 dB power compression (P1dB): 34 dBm typical

Third-order intercept (IP3): 52 dBm typical

High power handling

VDD

50Ω

RFC

CTRL

50Ω

GND

33.5 dBm through path

26.5 dBm terminated path

RF1

Single positive supply: 3 V to 5 V

CMOS-/TTL-compatible control

All off state control

Figure 1.

8-lead mini small outline package with exposed pad

(MINI_SO_EP)

APPLICATIONS

Cellular/4G infrastructure

Wireless infrastructure

Mobile radios

Test equipment

GENERAL DESCRIPTION

The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-

morphic high electron mobility transistor (PHEMT), single-pole,

double throw (SPDT) switch specified from 100 MHz to 4 GHz.

The HMC349AMS8G operates with a single positive supply

voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible

control interface.

The HMC349AMS8G is well suited for cellular infrastructure

applications by yielding high isolation of 57 dB, low insertion

loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB

of 34 dBm.

The HMC349AMS8G comes in an 8-lead mini small outline

package with an exposed pad.

Rev. C

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks andregisteredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

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HMC349AMS8GETR 替代型号

型号	品牌	替代类型	描述	数据表
HMC349AMS8GE	ADI	完全替代	HMC349AMS8GE

与HMC349AMS8GETR相关器件

型号	品牌	获取价格	描述	数据表
HMC349AMS8GTR	ADI	获取价格	High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz
HMC349LP4C	HITTITE	获取价格	HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz
HMC349LP4C_06	HITTITE	获取价格	HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz
HMC349LP4C_08	HITTITE	获取价格	HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz
HMC349LP4CE	HITTITE	获取价格	HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz
HMC349LP4CETR	HITTITE	获取价格	SPDT,
HMC349MS8G	HITTITE	获取价格	HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz
HMC349MS8G_07	HITTITE	获取价格	HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz
HMC349MS8G_08	HITTITE	获取价格	HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz
HMC349MS8GE	HITTITE	获取价格	HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz

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