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HMC326MS8G PDF预览

HMC326MS8G

更新时间: 2024-01-23 18:01:44
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器驱动
页数 文件大小 规格书
6页 232K
描述
GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz

HMC326MS8G 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:TSSOP8,.19
针数:8Reach Compliance Code:not_compliant
风险等级:5.11特性阻抗:50 Ω
构造:COMPONENT增益:18 dB
最大输入功率 (CW):15 dBmJESD-609代码:e0
安装特点:SURFACE MOUNT功能数量:1
端子数量:8最大工作频率:4500 MHz
最小工作频率:3000 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:TSSOP8,.19电源:5 V
射频/微波设备类型:WIDE BAND MEDIUM POWER子类别:RF/Microwave Amplifiers
最大压摆率:160 mA表面贴装:YES
技术:BIPOLAR端子面层:Tin/Lead (Sn85Pb15)
Base Number Matches:1

HMC326MS8G 数据手册

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HMC326MS8G  
v04.1203  
MICROWAVE CORPORATION  
GaAs InGaP HBT MMIC DRIVER  
AMPLIFIER, 3.0 - 4.5 GHz  
Features  
Typical Applications  
The HMC326MS8G is ideal for:  
• Microwave Radios  
8
Psat Output Power: +26 dBm  
> 40% PAE  
• Broadband Radio Systems  
Output IP3: +36 dBm  
High Gain: 21 dB  
• Wireless Local Loop Driver Amplifier  
Vs: +5.0V  
Ultra Small Package: MSOP8G  
Functional Diagram  
General Description  
The HMC326MS8G is a high efficiency GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC driver  
amplifier which operates between 3.0 and 4.5 GHz.  
The amplifier is packaged in a low cost, surface mount  
8 leaded package with an exposed base for improved  
RF and thermal performance. The amplifier provides  
21 dB of gain and +26 dBm of saturated power from  
a +5.0V supply voltage. Power down capability is  
available to conserve current consumption when the  
amplifier is not in use. Internal circuit matching was  
optimized to provide greater than 40% PAE.  
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V  
Parameter  
Min.  
Typ.  
Max.  
Units  
GHz  
dB  
Frequency Range  
3.0 - 4.5  
Gain  
18  
21  
Gain Variation Over Temperature  
Input Return Loss  
0.025  
0.035  
dB / °C  
dB  
12  
Output Return Loss  
7
dB  
Output Power for 1dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Noise Figure  
21  
32  
23.5  
dBm  
dBm  
dBm  
dB  
26  
36  
5
Supply Current (Icc)  
Control Current (Ipd)  
Switching Speed  
Vpd = 0V / 5V  
tOn/tOff  
0.001 / 130  
mA  
7
mA  
10  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
8 - 98  

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