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HMC322

更新时间: 2024-01-31 00:42:49
品牌 Logo 应用领域
HITTITE 开关
页数 文件大小 规格书
6页 179K
描述
GaAs MMIC SP8T NON-REFLECTIVE SWITCH, DC - 10.0 GHz

HMC322 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:DIE-14Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.791dB压缩点:23 dBm
其他特性:HIGH ISOLATION特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):26.02 dBm
最大插入损耗:3.4 dB最小隔离度:18 dB
JESD-609代码:e4功能数量:1
准时:0.15 µs最大工作频率:10000 MHz
最小工作频率:最高工作温度:85 °C
最低工作温度:-40 °C封装等效代码:DIE OR CHIP
端口终止:ABSORPTIVE电源:-5 V
射频/微波设备类型:SP8T子类别:RF/Microwave Switches
技术:GAAS端子面层:Gold (Au)

HMC322 数据手册

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HMC322  
v00.0303  
MICROWAVE CORPORATION  
GaAs MMIC SP8T NON-REFLECTIVE  
SWITCH, DC - 10.0 GHz  
Typical Applications  
The HMC322 is ideal for:  
Telecom Infrastructure  
• Microwave Radio & VSAT  
• Military & Space  
Features  
Broadband Performance: DC - 10.0 GHz  
High Isolation: >38 dB@ 4 GHz  
Low Insertion Loss: 2.0 dB@ 4 GHz  
Integrated 3:8 TTL Decoder  
Small Size: 1.45 mm x 1.6 mm x 0.10 mm  
Test Instrumentation  
Functional Diagram  
General Description  
The HMC322 is a broadband non-reflective  
GaAs MESFET SP8T switch chip. Covering DC  
to 10.0 GHz, this switch offers high isolation and  
low insertion loss and extends the frequency  
coverage of Hittite’s SP8T switch product line.  
This switch also includes an on board binary  
decoder circuit which reduces the required logic  
control lines to three. The switch operates using  
a negative control voltage of 0/-5V, and requires  
a fixed bias of -5V. All data is tested with the chip  
in a 50 Ohm test fixture connected via 0.025 mm  
(1 mil) diameter wire bonds of 0.5 mm (20 mils)  
length.  
7
Electrical Specifications,TA = +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 2.0 GHz  
DC - 4.0 GHz  
DC - 6.0 GHz  
DC - 8.0 GHz  
DC - 10.0 GHz  
1.9  
2.0  
2.1  
2.2  
2.4  
2.3  
2.4  
2.5  
2.6  
2.8  
dB  
dB  
dB  
dB  
dB  
Insertion Loss  
DC - 2.0 GHz  
DC - 4.0 GHz  
DC - 6.0 GHz  
DC - 8.0 GHz  
DC - 10.0 GHz  
40  
32  
27  
20  
18  
46  
38  
32  
26  
24  
dB  
dB  
dB  
dB  
dB  
Isolation (RFC to RF1 - 8)  
Return Loss  
Return Loss  
“On State”  
“Off State”  
DC - 10.0 GHz  
DC - 10.0 GHz  
0.5 - 10.0 GHz  
14  
11  
23  
dB  
dB  
Input Power for 1 dB Compression  
19  
34  
dBm  
Input Third Order Intercept  
(Two-Tone Input Power = +7 dBm Each Tone)  
0.5 - 10.0 GHz  
DC - 10.0 GHz  
38  
dBm  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
50  
150  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
7 - 14  

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