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HMC313_07 PDF预览

HMC313_07

更新时间: 2024-11-09 04:21:59
品牌 Logo 应用领域
HITTITE 放大器
页数 文件大小 规格书
6页 271K
描述
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz

HMC313_07 数据手册

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HMC313 / 313E  
v04.0307  
GaAs InGaP HBT MMIC BROADBAND  
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz  
5
Typical Applications  
Ideal as a Driver & Amplifier for:  
• 2.2 - 2.7 GHz MMDS  
Features  
P1dB Output Power: +14 dBm  
Output IP3: +27 dBm  
• 3.5 GHz Wireless Local Loop  
• 5.0 - 6.0 GHz UNII & HiperLAN  
Gain: 17 dB  
Single Supply: +5V  
High Reliability GaAs HBT Process  
Ultra Small Package: SOT26  
Included in the HMC-DK001 Designer’s Kit  
Functional Diagram  
General Description  
The HMC313  
&
HMC313E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC  
amplifiers that operate from a single Vcc supply. The  
surface mount SOT26 amplifier can be used as a  
broadband gain stage or used with external matching  
for optimized narrow band applications. With Vcc  
biased at +5V, the HMC313 & HMC313E offers 17 dB  
of gain and +15 dBm of saturated power while only  
requiring 50 mA of current.  
Electrical Specifications, TA = +25 °C, Vcc = +5.0V  
Vcc = +5V  
Parameter  
Units  
Min.  
14  
Typ.  
DC - 6  
17  
Max.  
Frequency Range  
GHz  
dB  
Gain  
20  
Gain Variation Over Temperature  
Input Return Loss  
0.02  
7
0.03  
dB/°C  
dB  
Output Return Loss  
6
dB  
Reverse Isolation  
30  
dB  
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz  
Saturated Output Power (Psat) @ 1.0 GHz  
Output Third Order Intercept (IP3) @ 1.0 GHz  
Noise Figure  
11  
24  
14  
dBm  
dBm  
dBm  
dB  
15  
27  
6.5  
50  
Supply Current (Icc)  
mA  
Note: Data taken with broadband bias tee on device output.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 28  

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