HMC268LM1
v03.1201
MICROWAVE CORPORATION
SMT MMIC LOW NOISE
AMPLIFIER, 20 - 32 GHz
Typical Applications
Features
The HMC268LM1 LNA enables
economical PCB SMT assembly for:
SMT mmWave Package
Excellent Noise Figure: 2.6 dB
15 dB Gain
1
• Millimeterwave Point-to-Point Radios
• LMDS
P1dB Output Power: +13 dBm
• SATCOM
Functional Diagram
General Description
The HMC268LM1 is a two stage GaAs MMIC Low
Noise Amplifier (LNA) in a SMT leadless chip carrier
package covering 20 to 32 GHz. The LM1 is a true
surface mount broadband millimeterwave package
offering low loss & excellent I/O match, preserving
MMIC chip performance. Utilizing a GaAs PHEMT
process the device offers 2.6 dB noise figure, 15 dB
gain and +13 dBm output power from a bias supply
of +4V @ 45 mA. As an alternative to chip-and-wire
hybrid assemblies the HMC268LM1 eliminates the
need for wirebonding, thereby providing a consis-
tent connection interface for the customer. All data
is with the non-hermetic, epoxy sealed LM1 pack-
aged LNA device mounted in a 50 ohm test fixture.
Electrical Specifications, TA = +25° C, Vdd= +4V*
Parameter
Min.
Typ.
20 - 26
14
Max.
Min.
13
Typ.
26 - 30
15
Max.
Min.
12
Typ.
30 - 32
15
Max.
Units
GHz
dB
Frequency Range**
Gain
11
17
18
18
Noise Figure
2.5
8
3.2
2.6
7
3.4
2.8
7
3.8
dB
Input Return Loss
Output Return Loss
Reverse Isolation
dB
12
8
7
dB
26
7
33
23
9
28
23
9
28
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
11
13
13
dBm
dBm
dBm
mA
13
13
16
14
17
17
15
15
18
22
22
21
45
50
45
50
45
50
* Vdd = +4V, adjust Vgg1 & Vgg2 between -2.0 to 0.0 Vdc to achieve ldd = 45 mA.
** Acceptable gain and NF performance is achievable down to 17 GHz.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
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