Datasheet > HMC268LM1

HMC268LM1

更新时间： 2024-02-20 15:42:19

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
8页	172K
描述
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz

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技术参数
数据手册

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HMC268LM1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	LCC8,.2SQ,40	Reach Compliance Code：	unknown
风险等级：	5.84	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	12 dB
最大输入功率 (CW)：	15 dBm	JESD-609代码：	e4
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	8	最大工作频率：	32000 MHz
最小工作频率：	20000 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	LCC8,.2SQ,40	电源：	4 V
射频/微波设备类型：	WIDE BAND LOW POWER	子类别：	RF/Microwave Amplifiers
最大压摆率：	50 mA	表面贴装：	YES
技术：	GAAS	端子面层：	Gold (Au) - with Nickel (Ni) barrier
Base Number Matches：	1

HMC268LM1 数据手册

HMC268LM1

MICROWAVE CORPORATION

SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz

FEBRUARY 2001

V01.0900

Features

General Description

SMT mmWAVE PACKAGE

The HMC268LM1 is a two stage GaAs MMIC Low

Noise Amplifier (LNA) in a SMT leadless chip

carrier package covering 20 to 32 GHz. The LM1

isatruesurfacemountbroadbandmillimeterwave

package offering low loss & excellent I/O match,

preserving MMIC chip performance. Utilizing a

GaAs PHEMT process the device offers 2.6 dB

noise figure, 15 dB gain and +13 dBm output

power from a bias supply of +4V @ 45 mA. The

packaged LNA enables economical PCB SMT

assembly for millimeterwave point-to-point ra-

dios, LMDS, and SATCOM applications. As an

alternative to chip-and-wire hybrid assemblies

the HMC268LM1 eliminates the need for

wirebonding, thereby providing a consistent con-

nection interface for the customer. All data is with

the non-hermetic, epoxy sealed LM1 packaged

LNA device mounted in a 50 ohm test fixture.

EXCELLENT NOISE FIGURE : 2.6 dB

15 dB GAIN

P1 dB OUTPUT POWER: +13 dBm

Guaranteed Performance, Vdd = +4V*, -55 to +85 deg C

Parameter

Frequency Range**

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units

20 - 26

26 - 30

30 - 32

GHz

Gain

Noise Figure

2.5

3.2

2.6

3.4

2.8

3.8

Input Return Loss

Output Return Loss

Reverse Isolation

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Voltage (Vdd)

Supply Voltage (Vgg1 &Vgg2)

Supply Current (Idd)

dBm

3.75 4.0

-2.0 -0.15 0.0

45 50

4.25 3.75 4.0

-2.0 -0.15 0.0 -2.0 -0.15 0.0

45 50 45 50

4.25 3.75 4.0

4.25 Vdc

Vdc

* Vdd = +4V, adjust Vgg1 & Vgg2 between -2.0 to 0.0 Vdc to achieve Idd = 45 mA.

** Acceptable gain and NF peformance is achievable down to 17 GHz.

12 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Web Site: www.hittite.com

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