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HMC261 PDF预览

HMC261

更新时间: 2024-01-15 17:35:45
品牌 Logo 应用领域
HITTITE 放大器
页数 文件大小 规格书
6页 187K
描述
GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz

HMC261 数据手册

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HMC261  
v01.0500  
MICROWAVE CORPORATION  
GaAs MMIC MEDIUM POWER  
DISTRIBUTED AMPLIFIER, 20 - 40 GHz  
Typical Applications  
Features  
The HMC261 is ideal for:  
• MMW Point-to-Point Radios  
• LMDS  
Stable Gain vs. Temperature: 14dB 1.5dB  
High Reverse Isolation: 40 ~ 50 dB  
P1dB Output Power: +12 dBm  
1
• VSAT  
Small Size: 1.3mm x 1.7mm  
• SATCOM  
General Description  
Functional Diagram  
The HMC261 chip is a GaAs MMIC distributed  
amplifier which covers the frequency range of 20  
to 40 GHz. The chip can easily be integrated into  
Multi-Chip Modules (MCMs) due to its small (2.21  
mm2) size. The chip utilizes a GaAs PHEMT pro-  
cess, operating from a single bias supply of + 3 to  
+4V with a P1dB output power of +12 dBm. All data  
is with the chip in a 50 ohm test fixture connected  
via 0.025 mm (1 mil) diameter wire bonds of minimal  
length 0.31 mm (<12 mils). The HMC261 may be  
used to drive the LOs of HMC mixers such as the  
HMC203, HMC292, HMC294, or HMC329.  
Electrical Specifications,TA = +25° C, Vdd = +4V  
Parameter  
Min.  
Typ.  
20 - 40  
13  
Max.  
18  
Min.  
Typ.  
27 - 32  
14  
Max.  
14  
Units  
GHz  
dB  
Frequency Range  
Gain  
8
3
11  
6
Input Return Loss  
Output Return Loss  
Reverse Isolation  
9
8
dB  
4
10  
7
8
dB  
32  
8
45  
40  
9
45  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Noise Figure  
12  
12  
dBm  
dBm  
dBm  
dB  
11  
20  
13  
11  
20  
13  
23  
23  
7.5  
75  
13  
90  
7
10  
90  
Supply Current (ldd)  
75  
mA  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Visit us at www.hittite.com, or Email at sales@hittite.com  
1 - 2  

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