HMC261
v01.0500
MICROWAVE CORPORATION
GaAs MMIC MEDIUM POWER
DISTRIBUTED AMPLIFIER, 20 - 40 GHz
Typical Applications
Features
The HMC261 is ideal for:
• MMW Point-to-Point Radios
• LMDS
Stable Gain vs. Temperature: 14dB 1.5dB
High Reverse Isolation: 40 ~ 50 dB
P1dB Output Power: +12 dBm
1
• VSAT
Small Size: 1.3mm x 1.7mm
• SATCOM
General Description
Functional Diagram
The HMC261 chip is a GaAs MMIC distributed
amplifier which covers the frequency range of 20
to 40 GHz. The chip can easily be integrated into
Multi-Chip Modules (MCMs) due to its small (2.21
mm2) size. The chip utilizes a GaAs PHEMT pro-
cess, operating from a single bias supply of + 3 to
+4V with a P1dB output power of +12 dBm. All data
is with the chip in a 50 ohm test fixture connected
via 0.025 mm (1 mil) diameter wire bonds of minimal
length 0.31 mm (<12 mils). The HMC261 may be
used to drive the LOs of HMC mixers such as the
HMC203, HMC292, HMC294, or HMC329.
Electrical Specifications,TA = +25° C, Vdd = +4V
Parameter
Min.
Typ.
20 - 40
13
Max.
18
Min.
Typ.
27 - 32
14
Max.
14
Units
GHz
dB
Frequency Range
Gain
8
3
11
6
Input Return Loss
Output Return Loss
Reverse Isolation
9
8
dB
4
10
7
8
dB
32
8
45
40
9
45
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
12
12
dBm
dBm
dBm
dB
11
20
13
11
20
13
23
23
7.5
75
13
90
7
10
90
Supply Current (ldd)
75
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
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