HMC234C8TR

更新时间： 2024-09-23 13:08:23

品牌	Logo	应用领域
HITTITE		开关光电二极管分离技术隔离技术
页数	文件大小	规格书
6页	248K
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HMC234C8TR 数据手册

HMC234C8

v03.1105

GaAs MMIC SMT HIGH ISOLATION

SPDT SWITCH, DC - 8.0 GHz

Typical Applications

The HMC234C8 is ideal for:

• Telecom Infrastructure

Features

Isolation: 52 dB @ 2.0 GHz

40 dB @ 6.0 GHz

Insertion Loss: 1.6 dB Typical @ 6.0 GHz

Non-Reﬂective Design

• Microwave Radio & VSAT

• Military Radios, Radar & ECM

• Test Instrumentation

Surface Mount Ceramic Package

Functional Diagram

General Description

The HMC234C8 is a broadband high isolation non-

reﬂective GaAs MESFET SPDT switch in a non-

hermetic surface mount ceramic package. Covering

DC to 8.0 GHz, the switch features >52 dB isolation

up to 2 GHz and >38 dB isolation up to 8.0 GHz.

The switch operates using complementary negative

control voltage logic lines of -5/0V and requires no

bias supply. This product is an excellent pin-for-pin

replacement to the SMDI SSW124.

Electrical Specifications, T_A= +25° C, With 0/-5V Control, 50 Ohm System

Parameter

Frequency

Min.

Typ.

Max.

Units

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

1.4

1.6

2.1

1.7

1.9

2.4

Insertion Loss

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

Isolation

DC - 2.0 GHz

DC - 8.0 GHz

Return Loss

“On State”

“Off State”

DC - 2.0 GHz

DC - 6.0 GHz

DC - 8.0 GHz

Return Loss RF1, RF2

Input Power for 1 dB Compression

Input Third Order Intercept

0.5 - 8.0 GHz

dBm

(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)

Switching Characteristics

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

DC - 8.0 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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