Datasheet > HMC233G8_08

HMC233G8_08

更新时间： 2024-09-23 10:53:35

品牌	Logo	应用领域
HITTITE		开关光电二极管分离技术隔离技术
页数	文件大小	规格书
6页	152K
描述
GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6 GHz

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HMC233G8_08 数据手册

HMC233G8

v00.0504

GaAs MMIC HIGH ISOLATION SMT

SPDT SWITCH, DC - 6 GHz

Typical Applications

The HMC233G8 is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military Radios, Radar & ECM

• Space Systems

Features

Isolation: 44 dB @ 2.0 GHz

31 dB @ 6.0 GHz

Insertion Loss: 1.5 dB Typical @ 4.0 GHz

Non-Reﬂective Design

Hermetic Surface Mount Package

• Test Instrumentation

General Description

Functional Diagram

The HMC233G8 is a broadband high isolation non-

reﬂective GaAs MESFET SPDT switch in a hermetic

surface mount package. Covering DC to 6 GHz, the

switch features >44 dB isolation up to 2 GHz and

>31 dB isolation up to 6 GHz. The switch operates

using complementary negative control voltage logic

lines of -5/0V and requires no bias supply.

Electrical Speciﬁcations, T_A= +25° C, With 0/-5V Control, 50 Ohm System

Parameter

Frequency

Min.

Typ.

Max.

Units

DC - 2.0 GHz

DC - 4.0 GHz

DC - 6.0 GHz

1.3

1.5

1.8

1.6

1.8

2.2

Insertion Loss

DC - 2.0 GHz

DC - 4.0 GHz

DC - 6.0 GHz

Isolation

DC - 5.0 GHz

DC - 6.0 GHz

Return Loss

“On State”

“Off State”

DC - 4.0 GHz

DC - 6.0 GHz

Return Loss RF1, RF2

Input Power for 1 dB Compression

Input Third Order Intercept

0.5 - 6.0 GHz

dBm

(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)

Switching Characteristics

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

DC - 6.0 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

10 - 90

12 3 4 5 6

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