HMC232LP4 / 232LP4E
v03.0805
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 12.0 GHz
Designer’s Kit
Available
Typical Applications
Features
The HMC232LP4 / HMC232LP4E is ideal for:
• Telecom Infrastructure
Isolation: 60 dB @ 3 GHz
52 dB @ 6 GHz
+27 dBm Input P1dB
• Microwave Radio & VSAT
Insertion Loss: 1.5 dB Typical @ 6 GHz
Non-Reflective Design
• Military Radios, Radar & ECM
• Test Instrumentation
4x4 mm QFN SMT Package
Included in the HMC-DK005 Designer’s Kit
8
General Description
Functional Diagram
The HMC232LP4 & HMC232LP4E are broadband high
isolation non-reflective GaAs MESFET SPDT switches
in low cost leadless QFN surface mount plastic pack-
ages. Covering DC to 12 GHz, the switch features >60
dB isolation up to 3 GHz and >42 dB isolation up to
12 GHz. Input P1dB compression is +27 dBm typical,
while input IP3 is +50 dBm. The switch operates using
complementary negative control voltage logic lines of
-5/0V and requires no bias supply.
Electrical Specifications, TA = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
DC - 3.0 GHz
DC - 6.0 GHz
DC - 9.0 GHz
DC - 12.0 GHz
1.4
1.5
2.0
2.7
1.7
1.8
2.3
3.1
dB
dB
dB
dB
Insertion Loss
DC - 3.0 GHz
DC - 6.0 GHz
DC - 9.0 GHz
DC - 12.0 GHz
55
47
40
37
60
52
45
42
dB
dB
dB
dB
Isolation
DC - 6.0 GHz
DC - 9.0 GHz
DC - 12.0 GHz
18
16
11
dB
dB
dB
Return Loss
“On State”
“Off State”
Return Loss RF1, RF2
DC - 12.0 GHz
0.5 - 12.0 GHz
14
27
dB
Input Power for 1 dB Compression
Input Third Order Intercept
24
45
dBm
0.5 - 12.0 GHz
DC - 12.0 GHz
50
dBm
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
3
6
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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