Datasheet > HMC232G8_06

HMC232G8_06

更新时间： 2024-01-13 14:51:35

品牌	Logo	应用领域
HITTITE		开关光电二极管分离技术隔离技术
页数	文件大小	规格书
6页	208K
描述
GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6.0 GHz

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HMC232G8_06 数据手册

HMC232G8

v01.1105

GaAs MMIC HIGH ISOLATION SMT

SPDT SWITCH, DC - 6.0 GHz

Typical Applications

Features

The HMC232G8 is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military Radios, Radar & ECM

• Space Systems

Isolation: 48 dB @ 2.0 GHz

34 dB @ 6.0 GHz

Insertion Loss: 1.5 dB Typical @ 4.0 GHz

Non-Reﬂective Design

Hermetic Surface Mount Package

• Test Instrumentation

General Description

Functional Diagram

The HMC232G8 is a broadband high isolation non-

reﬂective GaAs MESFET SPDT switch in a hermetic

surface mount package. Covering DC to 6.0 GHz, the

switch features >48 dB isolation up to 2 GHz and >34

dB isolation up to 6.0 GHz. The switch operates using

complementary negative control voltage logic lines of

-5/0V and requires no bias supply.

Electrical Specifications, T_A= +25° C, With 0/-5V Control, 50 Ohm System

Parameter

Frequency

Min.

Typ.

Max.

Units

DC - 2.0 GHz

DC - 4.0 GHz

DC - 6.0 GHz

1.4

1.5

1.8

1.7

1.8

2.2

Insertion Loss

DC - 2.0 GHz

DC - 4.0 GHz

DC - 6.0 GHz

Isolation

Return Loss

“On State”

“Off State”

DC - 6.0 GHz

DC - 2.0 GHz

DC - 4.0 GHz

DC - 6.0 GHz

Return Loss RF1, RF2

Input Power for 1 dB Compression

Input Third Order Intercept

0.5 - 6.0 GHz

dBm

(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)

Switching Characteristics

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

DC - 6.0 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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