Datasheet > HMC219BMS8GETR

HMC219BMS8GETR

更新时间： 2024-11-27 20:04:31

品牌	Logo	应用领域
亚德诺 - ADI		局域网射频微波
页数	文件大小	规格书
27页	414K
描述
2.5 GHz to 7.0 GHz GaAs, MMIC Fundamental Mixer

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

HMC219BMS8GETR 数据手册

2.5 GHz to 7.0 GHz GaAs, MMIC

Fundamental Mixer

Data Sheet

HMC219B

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Conversion loss: 9 dB typical

LO to RF isolation: 40 dB typical

LO to IF isolation: 35 dB typical

RF to IF isolation: 22 dB typical

Input IP3: 18 dBm typical

GND

HMC219B

GND

NIC

GND

Figure 1.

Input P1dB: 11 dBm typical

Input IP2: 55 dBm typical

Passive double balanced topology

8-lead, 3 mm × 3 mm, MINI_SO_EP

APPLICATIONS

Microwave radios

High performance radio local area network (HiperLAN) and

unlicensed national information infrastructure (U-NII)

Industrial, scientific, and medical (ISM)

GENERAL DESCRIPTION

The HMC219B is an ultraminiature, general-purpose, double

balanced mixer in an 8-lead plastic surface mini small outline

package with exposed pad (MINI_SO_EP). This passive

monolithic microwave integrated circuit (MMIC) mixer is

fabricated in a gallium arsenide (GaAs) metal semiconductor

field effect transistor (MESFET) process and requires no

external components or matching circuitry. The device can be

used as an upconverter, downconverter, biphase demodulator,

or phase comparator from 2.5 GHz to 7.0 GHz.

The HMC219B provides excellent local oscillator (LO) to radio

frequency (RF) isolation and LO to intermediate frequency (IF)

isolation due to optimized balun structures. The RoHS compliant

HMC219B eliminates the need for wire bonding and is compatible

with high volume surface-mount manufacturing techniques. The

consistent MMIC performance improves system operation and

assures regulatory compliance with HiperLAN, U-NII, and ISM.

Rev. A

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibilityisassumedbyAnalogDevicesforitsuse,norforanyinfringementsofpatentsorother

rights of third parties that may result from its use. Specifications subject to change without notice.

No license is granted by implication or otherwise under any patent or patent rights of Analog

Devices.Trademarks and registered trademarks are theproperty of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

12 3 4 5 6 7...27

中文翻译

下载PDF

HMC219BMS8GETR 替代型号

型号	品牌	替代类型	描述	数据表
HMC219BMS8GE	ADI	完全替代	2.5 GHz to 7.0 GHz GaAs, MMIC Fundamental Mixer

与HMC219BMS8GETR相关器件

型号	品牌	获取价格	描述	数据表
HMC219MS8	HITTITE	获取价格	GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 9 GHz
HMC219MS8_06	HITTITE	获取价格	GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 9 GHz
HMC219MS8_10	HITTITE	获取价格	GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 9 GHz
HMC219MS8E	HITTITE	获取价格	暂无描述
HMC219MS8ETR	HITTITE	获取价格	RF/Microwave Mixer, GAAS
HMC219MS8TR	HITTITE	获取价格	Double Balanced Mixer, GAAS
HMC220AMS8	HITTITE	获取价格	GaAs MMIC SMT DOUBLEBALANCED MIXER, 5 - 12 GHz
HMC220AMS8	ADI	获取价格	DBL-BAL Mixer SMT, 5 - 12 GHz
HMC220AMS8E	HITTITE	获取价格	Double Balanced Mixer, 5000MHz Min, 12000MHz Max, 10.5dB Conversion Loss-Max, GAAS, ROHS C
HMC220AMS8TR	ADI	获取价格	DBL-BAL Mixer SMT, 5 - 12 GHz

与HMC219BMS8GETR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

63
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

60

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC219BMS8GETR

HMC219BMS8GETR 数据手册

HMC219BMS8GETR 替代型号

与HMC219BMS8GETR相关器件

与HMC219BMS8GETR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC219BMS8GETR

HMC219BMS8GETR 数据手册

HMC219BMS8GETR 替代型号

与HMC219BMS8GETR相关器件

与HMC219BMS8GETR相关文章

您还可以找

您在本页遇到什么问题？