Datasheet > 射频和微波 > 射频/微波调制器/解调器> HMC136

HMC136

更新时间： 2024-11-17 22:33:35

品牌	Logo	应用领域
HITTITE		射频调制器射频解调器微波调制器微波解调器射频和微波
页数	文件大小	规格书
4页	117K
描述
GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz

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HMC136 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.67
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	COMPONENT	JESD-609代码：	e4
调制技术：	BIPHASE	最大工作频率：	8000 MHz
最小工作频率：	4000 MHz	射频/微波设备类型：	MODULATOR
端子面层：	Gold (Au)	Base Number Matches：	1

HMC136 数据手册

HMC136

v01.0300

MICROWAVE CORPORATION

GaAs MMIC BI-PHASE

MODULATOR, 4 - 8 GHz

Typical Applications

Features

The HMC136 is suitable for:

• Wireless Local Loop

• LMDS & VSAT

Chip Integrates Directly into MIC Designs

30 dB of Carrier Suppression

Direct Modulation in the 4 - 8 GHz Band

Functions also as a Phase Detector

• Pt. to Pt. Radios

• Test Equipment

General Description

Functional Diagram

The HMC136 Bi-Phase Modulator is designed to

phase-modulate an RF signal into reference and 180

degree states. Device input is at the RF port and output

is at the LO port. The polarity of the bias current at the

control port (IF port) deﬁnes the phase states.Excellent

amplitude and phase balance provided by closely

matched monolithic balun and diode circuits delivers

30 dB of carrier suppression in a tiny monolithic chip.

The device also functions as a demodulator or

phase comparator. As a demodulator, data emerges

at the control port when a modulated signal at the

RF port is compared to a reference signal at the

LO port. As a phase comparator, the phase angle

between two signals applied to the RF and LO ports

is represented by an analog voltage at the control port.

Except for carrier suppression, the data presented

here was measured under static conditions in which

a DC bias current (nominally 5 mA) is applied to the

control port.

Electrical Speciﬁcations, T_A= +25° C, 5 mA Bias Current

Parameter

Min.

2.5

Typ.

4 - 8

Max.

Units

GHz

Frequency Band

Insertion Loss

Return Loss, RF and LO Ports

Amplitude Balance

3.0

0.1

4.0

0.5

6.0

Phase Balance

deg

dBc

dBm

Carrier Supression (When driven with a 1 MHz square wave, 1.4 Vp-p)

Input Power for 1 dB Compression

Third Order Intercept, Input

Second Order Intercept, Input

Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V

at the control port).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

6 - 6

12 3 4

中文翻译

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与HMC136相关器件

型号	品牌	获取价格	描述	数据表
HMC136_07	HITTITE	获取价格	GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz
HMC136_09	HITTITE	获取价格	GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz
HMC137	HITTITE	获取价格	GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz
HMC137_07	HITTITE	获取价格	GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz
HMC137_09	HITTITE	获取价格	GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz
HMC138	ETC	获取价格	Microwave/Millimeter Wave Amplifier
HMC139	ETC	获取价格	Microwave/Millimeter Wave Amplifier
HMC13DRAH	ETC	获取价格	CONN EDGE DUAL FMALE 26POS 0.100
HMC13DRAH-S734	ETC	获取价格	CONN EDGE DUAL FMALE 26POS 0.100
HMC13DRAI	ETC	获取价格	CONN EDGE DUAL FMALE 26POS 0.100

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