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HMC135

更新时间： 2024-01-04 23:49:34

品牌	Logo	应用领域
HITTITE		射频调制器射频解调器微波调制器微波解调器射频和微波
页数	文件大小	规格书
4页	123K
描述
GaAs MMIC BI-PHASE MODULATOR, 1.8 - 5.2 GHz

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技术参数
数据手册

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HMC135 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.65
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	COMPONENT	最大变频损耗：	11 dB
JESD-609代码：	e4	调制技术：	BIPHASE
最大工作频率：	5200 MHz	最小工作频率：	1800 MHz
射频/微波设备类型：	MODULATOR	端子面层：	Gold (Au)
Base Number Matches：	1

HMC135 数据手册

HMC135

v02.0304

MICROWAVE CORPORATION

GaAs MMIC BI-PHASE

MODULATOR, 1.8 - 5.2 GHz

Typical Applications

Features

The HMC135 is suitable for:

• Wireless Local Loop

• LMDS & VSAT

Chip Integrates Directly into MIC Designs

30 dB of Carrier Suppression

Direct Modulation in the 1.8 - 5.2 GHz Band

Functions also as a Phase Detector

• Pt. to Pt. Radios

• Test Equipment

Functional Diagram

General Description

The HMC135 Bi-Phase Modulator is designed to

phase-modulate an RF signal into reference and 180

degree states. Device input is at the RF port and output

is at the LO port. The polarity of the bias current at the

control port (IF port) deﬁnes the phase states. Excel-

lent amplitude and phase balance provided by closely

matched monolithic balun and diode circuits delivers

30 dB of carrier suppression in a tiny monolithic chip.

The device also functions as a demodulator or phase

comparator. As a demodulator, data emerges at the

control port when a modulated signal at the RF port

is compared to a reference signal at the LO port. As a

phase comparator, the phase angle between two sig-

nals applied to the RF and LO ports is represented by

an analog voltage at the control port. Except for carrier

suppression, the data presented here was measured

under static conditions in which a DC bias current

(nominally 5 mA) is applied to the control port.

Electrical Speciﬁcations, T_A= +25° C, 5 mA Bias Current

Parameter

Min.

2.5

Typ.

1.8 - 5.2

Max.

Units

GHz

Frequency Band

Insertion Loss

Return Loss, RF and LO Ports

Amplitude Balance

3.0

0.2

2.5

0.5

5.0

Phase Balance

Deg

dBc

dBm

Carrier Suppression (When driven with a 1 MHz square wave, 1.4 Vp-p)

Input Power for 1 dB Compression

Third Order Intercept, Input

Second Order Intercept, Input

Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V

at the control port).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

6 - 2

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