Datasheet > HMC132G7_01

HMC132G7_01

更新时间： 2022-12-28 04:28:28

品牌	Logo	应用领域
HITTITE		开关光电二极管分离技术隔离技术
页数	文件大小	规格书
4页	82K
描述
GaAs MMIC HIGH-ISOLATION SPDT SWITCH, DC - 6 GHz

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HMC132G7_01 数据手册

HMC132G7/HMC132P7

v01.0801

MICROWAVE CORPORATION

GaAs MMIC HIGH-ISOLATION

SPDT SWITCH, DC - 6 GHz

Typical Applications

Features

The HMC132G7 and HMC132P7 are ideal for:

Bandwidth: DC - 6 GHz

High Isolation: >40 dB

Non-Reﬂective Design

• Military

• Space

• Test Equipment

Functional Diagram

General Description

The HMC132G7 and HMC132P7 are the pack-

aged versions of the HMC132 MMIC SPDT

switch. Both use the same 7-pin ceramic pack-

age but with modiﬁed lead conﬁgurations. The

G7 sufﬁx designates package leads conﬁgured

for surface mount while the P7 sufﬁx designates

package leads conﬁgured for microstrip insertion.

The device is a fast, broadband SPDT switch fea-

turing high (> 40 dB) isolation over the entire

band. The switch is non-reﬂective at both the

RF1 and RF2 ports.

Electrical Speciﬁcations, T_A= +25° C, With 0/-5V control, 50 Ohm System

Parameter

Frequency

Min.

Typ.

Max.

Units

DC - 3 GHz

DC - 6 GHz

1.5

2.2

1.9

2.6

Insertion Loss

Isolation

DC - 3 GHz

DC - 6 GHz

DC - 3 GHz

DC - 6 GHz

Return Loss (on state)

Input Power for 0.1 dB Compression

Input Power for 1dB Compression

Input Third Order Intercept

0.5 - 6 GHz

DC - 6 GHz

+20

+22

+38

+25

+27

+42

dBm

Switching Characteristics

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at sales@hittite.com

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