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HMC121C8 PDF预览

HMC121C8

更新时间: 2024-02-12 18:25:17
品牌 Logo 应用领域
HITTITE 射频和微波射频衰减器微波衰减器
页数 文件大小 规格书
6页 194K
描述
GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz

HMC121C8 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SOP8,.3Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
标称衰减:30 dB特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):16.02 dBm
最大插入损耗:4.5 dBJESD-609代码:e4
安装特点:SURFACE MOUNT端子数量:8
最大工作频率:10000 MHz最小工作频率:
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SOP8,.3
射频/微波设备类型:VARIABLE ATTENUATOR子类别:RF/Microwave Attenuators
表面贴装:YES技术:GAAS
端子面层:Gold (Au) - with Nickel (Ni) barrierBase Number Matches:1

HMC121C8 数据手册

 浏览型号HMC121C8的Datasheet PDF文件第2页浏览型号HMC121C8的Datasheet PDF文件第3页浏览型号HMC121C8的Datasheet PDF文件第4页浏览型号HMC121C8的Datasheet PDF文件第5页浏览型号HMC121C8的Datasheet PDF文件第6页 
HMC121C8  
MICROWAVE CORPORATION  
GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz  
V03.0400  
FEBRUARY 2001  
Features  
General Description  
The HMC121C8 is an absorptive Voltage  
VariableAttenuator(VVA)inanon-hermetic  
surface-mount package covering DC - 10  
GHz. It features an on-chip reference at-  
tenuator for use with an external op-amp to  
provide simple single voltage attenuation  
control, 0 to -3V. The device is ideal in  
designs where an analog DC control signal  
must control RF signal levels over a 25 dB  
amplituderange. Applicationsinclude AGC  
circuits and temperature compensation of  
multiple gain stages in microwave point-to-  
point and VSAT radios. See HMC121G8  
for a hermetic SMT version of this device.  
WIDE BANDWIDTH: DC - 10 GHz  
LOW PHASE SHIFT VS. ATTENUATION  
25 dB ATTENUATION RANGE  
2
SIMPLIFIEDVOLTAGECONTROL  
Guaranteed Performance, 50 ohm system, -55 to +85 deg C  
Parameter  
Min  
Typical  
Max  
Units  
Insertion Loss  
DC - 6 GHz :  
DC - 8 GHz :  
DC - 10 GHz :  
2.0  
2.2  
3.5  
2.5  
3.2  
4.5  
dB  
dB  
dB  
Attenuation Range  
Return Loss  
DC - 6 GHz:  
DC - 10 GHz :  
20  
25  
25  
30  
dB  
DC - 8 GHz:  
DC - 10 GHz :  
11  
8
15  
12  
dB  
dB  
Switching Characteristics  
tRISE, tFALL (10/90% RF):  
tON, tOFF (50% CTL to 10/90% RF):  
3
6
ns  
ns  
Input Power for 0.25 dB Compression  
(0.5 - 10 GHz)  
Min. Atten:  
Atten. >2 dB:  
+3  
-3  
dBm  
dBm  
Input Third Order Intercept (two - 8 dBm  
signals, 0.5 - 10 GHz)  
Min. Atten:  
+18  
+10  
dBm  
dBm  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343  
Fax: 978-250-3373  
Web Site: www.hittite.com  
2-14  

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