Datasheet > HMC-XDB112

HMC-XDB112

更新时间： 2024-11-07 03:14:39

品牌	Logo	应用领域
HITTITE		射频微波输入元件
页数	文件大小	规格书
6页	158K
描述
GaAs MMIC PASSIVE FREQUENCY DOUBLER, 10 - 15 GHz INPUT

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HMC-XDB112 数据手册

HMC-XDB112

v00.0907

GaAs MMIC PASSIVE FREQUENCY

DOUBLER, 10 - 15 GHz INPUT

Typical Applications

This HMC-XDB112 is ideal for:

Features

Conversion Loss: 13 dB

Passive: No DC Bias Required

Input Drive: +13 dBm

• Point-to-Point Radios

• VSAT

High Fo Isolation: 30 dB

Die Size: 2.2 x 0.65 x 0.1 mm

• Test Instrumentation

• Military & Space

• Clock Generation

General Description

Functional Diagram

The HMC-XDB112 is a monolithic Passive Frequency

Doubler which utilizes GaAs Heterojunction Bipolar

Transistor (HBT) technology, and is targeted to high

volume applications where frequency doubling of a

lower frequency is more economical than directly

generating a higher frequency. All bond pads and

the die backside are Ti/Au metallized and the HBT

devices are fully passivated for reliable operation. The

HMC-XDB112 Passive Doubler MMIC is compatible

with conventional die attach methods, as well as

thermocompression and thermosonic wire bonding,

making it ideal for MCM and hybrid microcircuit

applications. All data shown herein is measured with

the chip in a 50 Ohm environment and contacted with

RF probes.

Electrical Speciﬁcations*, T_A= 25 °C, Pin = +13 dBm

Parameter

Min.

Typ.

10 - 15

20 - 30

Max.

Units

GHz

Frequency Range Input

Frequency Range Output

Conversion Loss

Fo Isolation with respect to output

*Unless otherwise indicated, all measurements are from probed die

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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