Datasheet > HMC-SDD112_09

HMC-SDD112_09

更新时间： 2022-11-07 18:26:28

品牌	Logo	应用领域
HITTITE		开关光电二极管
页数	文件大小	规格书
6页	181K
描述
GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz

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HMC-SDD112_09 数据手册

HMC-SDD112

v02.0309

GaAs PIN MMIC SPDT SWITCH

55 - 86 GHz

Typical Applications

Features

This HMC-SDD112 is ideal for:

Low Insertion Loss: 2 dB

High Isolation: 30 dB

• FCC E-Band Communication Systems

• Short-Haul / High Capacity Radios

• Automotive Radar

DC Blocked RF I/Os

Integrated DC Bias Circuitry

Die Size: 2.01 x 0.975 x 0.1 mm

• Test & Measurement Equipment

• SATCOM

• Sensors

Functional Diagram

General Description

The HMC-SDD112 is a monolithic, GaAs PIN diode

based Single Pole Double Throw (SPDT) MMIC

Switch which exhibits low insertion loss and high

isolation. This all-shunt MMIC SPDT features

on-chip DC blocks and DC bias voltage decoupling

circuitry. All bond pads and the die backside are

Ti/Au metallized and the PIN diode devices are fully

passivated for reliable operation. The HMC-SDD112

GaAs PIN SPDT is compatible with conventional die

attach methods, as well as thermocompression and

thermosonic wirebonding, making it ideal for MCM

and hybrid microcircuit applications. All data shown

herein is measured with the chip in a 50 Ohm en-

vironment and contacted with RF probes.

Electrical Speciﬁcations*, T_A= +25 °C, with -5/+5V Control, 50 Ohm System

Parameter

Min.

Typ.

55 - 86

Max.

Units

GHz

Frequency Range

Insertion Loss

Isolation

Return Loss ON State

Current (+5 V) ON State

Current (-5 V) OFF State

-63

* Unless otherwise indicated, all measurements are from probed die

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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