Datasheet > HMC-ALH102_09

HMC-ALH102_09

更新时间： 2024-09-21 10:53:31

品牌	Logo	应用领域
HITTITE		/
页数	文件大小	规格书
6页	181K
描述
GaAs HEMT MMIC WIDEBAND

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HMC-ALH102_09 数据手册

HMC-ALH102

v02.0209

GaAs HEMT MMIC WIDEBAND

LOW NOISE AMPLIFIER, 2 - 20 GHz

Typical Applications

This HMC-ALH102 is ideal for:

Features

Noise Figure: 2.5 dB

• Wideband Communications Receivers

• Surveillance Systems

Gain: 11.6 dB @ 10 GHz

P1dB Output Power: +10 dBm

Supply Voltage: +2V @ 55 mA

Die Size: 3.0 x 1.435 x 0.1 mm

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Military & Space

• Test Instrumentation

General Description

Functional Diagram

The HMC-ALH102 is a GaAs MMIC HEMT Low Noise

Distributed Ampliﬁer die which operates between

2 and 20 GHz. The ampliﬁer provides 11.6 dB of gain

at 10 GHz, 2.5 dB noise ﬁgure and +10 dBm of out-

put power at 1 dB gain compression while requiring

only 55 mA from a +2V supply voltage. The HMC-

ALH102 ampliﬁer is ideal for integration into Multi-

Chip-Modules (MCMs) due to its small size.

Electrical Speciﬁcations, T_A= +25° C, Vdd= 2V^[1], Idd = 55mA^[2]

Parameter

Min.

Typ.

2 - 20

Max.

Units

GHz

Frequency Range

Gain

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression

Noise Figure

dBm

2.5

Supply Current (Idd)

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg between -1V to +0.3V (Typ. -0.5V) to achieve Idd= 55 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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