Datasheet > HMC-ABH241_09

HMC-ABH241_09

更新时间： 2022-11-07 18:20:20

品牌	Logo	应用领域
HITTITE		放大器功率放大器
页数	文件大小	规格书
6页	220K
描述
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz

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HMC-ABH241_09 数据手册

HMC-ABH241

v02.0209

GaAs HEMT MMIC MEDIUM POWER

AMPLIFIER, 50 - 66 GHz

Typical Applications

This HMC-ABH241 is ideal for:

Features

Output IP3: +25 dBm

P1dB: +17 dBm

• Short Haul / High Capacity Links

• Wireless LAN Bridges

• Military & Space

Gain: 24 dB

Supply Voltage: +5V

50 Ohm Matched Input/Output

Die Size: 3.2 x 1.42 x 0.1 mm

Functional Diagram

General Description

The HMC-ABH241 is a four stage GaAs HEMT MMIC

Medium Power Ampliﬁer which operates between

50 and 66 GHz. The HMC-ABH241 provides 24 dB

of gain, and an output power of +17 dBm at 1dB

compression from a +5V supply voltage. All bond pads

and the die backside are Ti/Au metallized and the

ampliﬁer device is fully passivated for reliable operation.

The HMC-ABH241 GaAs HEMT MMIC Medium

Power Ampliﬁer is compatible with conventional die

attach methods, as well as thermocompression and

thermosonic wire bonding, making it ideal for MCM and

hybrid microcircuit applications. All data shown herein

is measured with the chip in a 50 Ohm environment

and contacted with RF probes.

Electrical Speciﬁcations, T_A= +25° C,

Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220 mA

[2]

Parameter

Min.

Typ.

50 - 66

Max.

Units

GHz

Frequency Range

Gain

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Output Third Order Intercept (IP3)

dBm

Saturated Output Power (Psat)

Supply Current (Idd1 + Idd2 + Idd3)

220

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg1 = Vgg2 = Vgg3 between -1V to +0.3V (typ -0.3V) to achieve Idd_total= 220 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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