Datasheet > HMC-ABH209_09

HMC-ABH209_09

更新时间： 2022-11-07 18:19:23

品牌	Logo	应用领域
HITTITE		放大器功率放大器
页数	文件大小	规格书
6页	185K
描述
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz

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HMC-ABH209_09 数据手册

HMC-ABH209

v02.0209

GaAs HEMT MMIC MEDIUM POWER

AMPLIFIER, 55 - 65 GHz

Typical Applications

Features

Output IP3: +25 dBm

P1dB: +16 dBm

This HMC-ABH209 is ideal for:

• Short Haul / High Capacity Links

• Wireless LAN Bridges

Gain: 13 dB

Supply Voltage: +5V

50 Ohm Matched Input/Output

Die Size: 2.2 x 1.22 x 0.1 mm

• Military & Space

General Description

Functional Diagram

The HMC-ABH209 is a high dynamic range, two

stage GaAs HEMT MMIC Medium Power Ampliﬁer

which operates between 55 and 65 GHz. The HMC-

ABH209 provides 13 dB of gain, and an output power

of +16 dBm at 1dB compression from a +5V supply

voltage. All bond pads and the die backside are

Ti/Au metallized and the ampliﬁer device is fully

passivated for reliable operation. The HMC-ABH209

GaAs HEMT MMIC Medium Power Ampliﬁer is

compatible with conventional die attach methods,

as well as thermocompression and thermosonic

wirebonding, making it ideal for MCM and hybrid

microcircuit applications. All data shown herein is

measured with the chip in a 50 Ohm environment and

contacted with RF probes.

[2]

Electrical Speciﬁcations, T_A= +25° C, Vdd= 5V, Idd= 80 mA

Parameter

Min.

Typ.

55 - 65

Max.

Units

GHz

Frequency Range

Gain

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Output Third Order Intercept (IP3)

dBm

Saturated Output Power (Psat)

Supply Current (Idd)

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg between -1V to +0.3V (typ -0.3V) to achieve Idd_total= 80 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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