5秒后页面跳转
HMC-ABH209 PDF预览

HMC-ABH209

更新时间: 2024-02-10 14:05:21
品牌 Logo 应用领域
HITTITE 放大器功率放大器
页数 文件大小 规格书
6页 185K
描述
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz

HMC-ABH209 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active针数:0
Reach Compliance Code:compliantECCN代码:3A001.B.2.F
HTS代码:8542.31.00.01风险等级:1.36
构造:COMPONENT增益:12 dB
最大输入功率 (CW):10 dBm最大工作频率:65000 MHz
最小工作频率:55000 MHz射频/微波设备类型:WIDE BAND MEDIUM POWER
Base Number Matches:1

HMC-ABH209 数据手册

 浏览型号HMC-ABH209的Datasheet PDF文件第2页浏览型号HMC-ABH209的Datasheet PDF文件第3页浏览型号HMC-ABH209的Datasheet PDF文件第4页浏览型号HMC-ABH209的Datasheet PDF文件第5页浏览型号HMC-ABH209的Datasheet PDF文件第6页 
HMC-ABH209  
v01.1207  
GaAs HEMT MMIC MEDIUM POWER  
AMPLIFIER, 55 - 65 GHz  
Typical Applications  
Features  
Output IP3: +25 dBm  
P1dB: +16 dBm  
This HMC-ABH209 is ideal for:  
• Short Haul / High Capacity Links  
• Wireless LAN Bridges  
Gain: 13 dB  
3
Supply Voltage: +5 V  
50 Ohm Matched Input/Output  
Die Size: 2.2 x 1.22 x 0.1 mm  
• Military & Space  
General Description  
Functional Diagram  
The HMC-ABH209 is a high dynamic range, two  
stage GaAs HEMT MMIC Medium Power Amplifier  
which operates between 55 and 65 GHz. The HMC-  
ABH209 provides 13 dB of gain, and an output power  
of +16 dBm at 1dB compression from a +5V supply  
voltage. All bond pads and the die backside are  
Ti/Au metallized and the amplifier device is fully  
passivated for reliable operation. The HMC-ABH209  
GaAs HEMT MMIC Medium Power Amplifier is  
compatible with conventional die attach methods,  
as well as thermocompression and thermosonic  
wirebonding, making it ideal for MCM and hybrid  
microcircuit applications. All data shown herein is  
measured with the chip in a 50 Ohm environment and  
contacted with RF probes.  
[2]  
Electrical Specifications, TA = +25° C, Vdd= 5V, Idd= 80 mA  
Parameter  
Min.  
Typ.  
55 - 65  
13  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
12  
Input Return Loss  
Output Return Loss  
13  
dB  
17  
dB  
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept (IP3)  
16  
dBm  
dBm  
dBm  
mA  
25  
Saturated Output Power (Psat)  
18  
Supply Current (Idd)  
80  
[1] Unless otherwise indicated, all measurements are from probed die  
[2] Adjust Vgg between -1V to +0.3V (typ -0.3V) to achieve Iddtotal = 80 mA  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 130  

与HMC-ABH209相关器件

型号 品牌 描述 获取价格 数据表
HMC-ABH209_09 HITTITE GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz

获取价格

HMC-ABH209-Die ADI 中等功率放大器芯片,55 - 65 GHz

获取价格

HMC-ABH241 HITTITE GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz

获取价格

HMC-ABH241_0712 HITTITE GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz

获取价格

HMC-ABH241_09 HITTITE GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz

获取价格

HMC-ABH241-Die ADI 中等功率放大器芯片,50 - 66 GHz

获取价格