Datasheet > HMBTA64

HMBTA64

更新时间： 2024-01-16 08:09:02

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
4页	40K
描述
PNP SILICON TRANSISTOR

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技术参数
数据手册

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HMBTA64 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	10000
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.225 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	125 MHz
Base Number Matches：	1

HMBTA64 数据手册

Spec. No. : HE6807

Issued Date : 1998.08.12

Revised Date : 2004.09.07

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HMBTA64

PNP SILICON TRANSISTOR

Description

The HMBTA64 is designed for application requiring extremely high current gain at

collector current to 500mA.

SOT-23

Features

• High D.C. Current Gain

• For Complementary use with NPN Type HMBTA14

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature........................................................................................................................... -55 ~ +150 °C

Junction Temperature................................................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T_A=25°C)............................................................................................................... 225 mW

• Maximum Voltages and Currents (T_A=25°C)

V_CBOCollector to Base Voltage.......................................................................................................................... -30 V

V_CESCollector to Emitter Voltage....................................................................................................................... -30 V

V_EBOEmitter to Base Voltage............................................................................................................................. -10 V

I_CCollector Current ...................................................................................................................................... -500 mA

Electrical Characteristics (T_A=25°C)

Symbol

BV_CBO

BV_CES

BV_EBO

I_CBO

Min.

-30

-10

Typ.

Max.

Unit

Test Conditions

I_C=-100uA

I_E=-10uA

V_CB=-30V

V_EB=-10V

-100

-1.5

-2

I_EBO

*V_CE(sat)

V_BE(on)

*h_FE1

*h_FE2

f_T

I_C=-100mA, I_B=-0.1mA

I_C=-100mA, V_CE=-5V

10K

20K

125

I_C=-10mA, V_CE=-5V

I_C=-100mA, V_CE=-5V

MHz

I_C=-100mA, V_CE=-5V, f=100MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HMBTA64

HSMC Product Specification

12 3 4

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